Allicdata Part #: | RN1301LFTR-ND |
Manufacturer Part#: |
RN1301,LF |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1301,LF Datasheet/PDF |
Quantity: | 30000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02024 |
6000 +: | $ 0.01826 |
15000 +: | $ 0.01588 |
30000 +: | $ 0.01429 |
75000 +: | $ 0.01270 |
150000 +: | $ 0.01058 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Base Part Number: | RN130* |
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RN1301 is a single, pre-biased transistor component, part of the well known bipolar junction transistor (BJT) family. The component is well suited for driving mid-power devices due to their high power density, low power losses and small package size, delivering better efficiency and safety.
This component offers a maximum voltage of 80V and a maximum collector power dissipation of 37W. It comes with a pre-applied bias voltage and current in order to minimize set-up time and reduce power consumption and losses. The pre-applied bias voltage and current are adjustable, allowing the component to be used with a wide range of applications.
RN1301 has an integrated thermal and current protection in case of overload, further enhancing its safety and robustness. The component features an exponential gain, which is adjustable and allows a linear or non-linear response depending on the device used. Additionally, the component comes with high voltage and current gains, low on-resistance and low total harmonic distortion. All these features make it suitable for a wide array of applications such as modulating high-power switches, Power Factor Correction (PFC) circuits, LED lighting control, high-performance audio amplifiers, SMPS and motion controllers.
Regarding the working principle of the RN1301, it operates on the principle of the bipolar junction transistor. The basic idea is that a current flows through the base-emitter junction, which is regulated by the voltage difference between the base and emitter. An increase in the base current will cause an increase in the collector current, resulting in a linear- or non-linear response. The collector current is then proportional to the base current, the gain being exponential, and this is the reason why it is well suited for driving mid-power devices.
The RN1301 offers numerous advantages in terms of power density, efficiency and safety, making it suitable for a wide range of applications such as driving mid-power devices, regulating high-power switches and improving the efficiency of lighting control and audio amplifiers. Its pre-applied bias voltage and current, together with its integrated thermal and current protection, make it the ideal choice for applications requiring high robustness, precision and power efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RN1301,LF | Toshiba Semi... | 0.02 $ | 30000 | TRANS PREBIAS NPN 0.1W US... |
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