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RN1316,LF Discrete Semiconductor Products |
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Allicdata Part #: | RN1316LFTR-ND |
Manufacturer Part#: |
RN1316,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.02362 |
6000 +: | $ 0.02130 |
15000 +: | $ 0.01852 |
30000 +: | $ 0.01667 |
75000 +: | $ 0.01482 |
150000 +: | $ 0.01235 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Base Part Number: | RN131* |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
RN1316 and LF are Transistors - Bipolar (BJT) - Single, Pre-Biased hybrid integrated circuit components that can be used for high frequency and power applications. They have been developed for the unique design of power amplifiers, high speed switches, and high frequency voltage amplifiers for both industrial and consumer applications.
Advantages
- Low noise level
- High efficiency power conversion
- High switching speed
- Small package and easy to mount
- Low distortion
Application Fields
RN1316 and LF are ideal for a wide range of high voltage application fields, including:
- High frequency operation amplifiers
- RF transmitter circuits
- Video amplifiers
- High speed switching circuits
- High frequency power converters
- Class D audio amplifiers
- Power management circuits
Working Principle
RN1316 and LF are operated by the bipolar Junction Transistor (BJT) design. A BJT acts as a switch, allowing current to flow through it when a voltage is applied to it. In the case of RN1316 and LF, a PNP BJT is used so the current flows to the emitter when the voltage is a positive value. The positive voltage or current applied to the emitter of the BJT is known as the biasing voltage. The biasing voltage is able to control the current flowing through the BJT and is used to regulate the output voltage of the RN1316 and LF components.
The design of the RN1316 and LF components allow them to achieve a high switching speed and excellent power conversion efficiency. This is made possible by the use of a thin oxide layer surrounding the PNP BJT, which allows for the fast switching of the current. This makes them ideal for use in applications such as high-frequency operation amplifiers, RF transmitters and high speed switching circuits.
Conclusion
The RN1316 and LF components are hybrid integrated circuit components that employ a bipolar Junction Transistor (BJT) design for high frequency and power applications. They offer a low noise level and high power conversion efficiency, making them ideal for a wide range of high voltage application fields including high frequency operation amplifiers, RF transmitters, video amplifiers, and high speed switching circuits. The BJT design of the components is used to regulate the current and output voltage and is surrounded by a thin oxide layer which allows for fast switching of the current, making them highly efficient.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RN1301,LF | Toshiba Semi... | 0.02 $ | 30000 | TRANS PREBIAS NPN 0.1W US... |
RN1308,LF | Toshiba Semi... | 0.02 $ | 6000 | TRANS PREBIAS NPN 0.1W US... |
RN1316,LF | Toshiba Semi... | 0.03 $ | 3000 | TRANS PREBIAS NPN 0.1W US... |
RN1305,LF | Toshiba Semi... | 0.04 $ | 9000 | TRANS PREBIAS NPN 0.1W US... |
RN1306,LF | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1318(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1312(TE85L,F) | Toshiba Semi... | 0.04 $ | 3000 | TRANS PREBIAS NPN 0.15W U... |
RN1313(TE85L,F) | Toshiba Semi... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.15W U... |
RN1302,LF | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
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RN1317(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1304,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM PLN (LF) TRA... |
RN1307,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1311,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1315,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1314(TE85L,F) | Toshiba Semi... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1303(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1310(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1309(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
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RN131G-I/RM | Microchip Te... | 25.25 $ | 777 | RF TXRX MOD WIFI CHIP + U... |
RN131C/RM481 | Microchip Te... | 21.96 $ | 280 | RF TXRX MODULE WIFI CHIP ... |
RN131G-I/RM481 | Microchip Te... | 25.25 $ | 677 | RF TXRX MODULE WIFI CHIP ... |
RN131G-I/RM475 | Microchip Te... | 25.25 $ | 119 | RF TXRX MOD WIFI CHIP + U... |
RN131C/RM475 | Microchip Te... | 21.96 $ | 35 | RF TXRX MOD WIFI CHIP + U... |
RN134-I/RM | Microchip Te... | 0.0 $ | 1000 | RF TXRX MOD WIFI CHIP + U... |
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