RN1316,LF Allicdata Electronics

RN1316,LF Discrete Semiconductor Products

Allicdata Part #:

RN1316LFTR-ND

Manufacturer Part#:

RN1316,LF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1316,LF datasheetRN1316,LF Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.02362
6000 +: $ 0.02130
15000 +: $ 0.01852
30000 +: $ 0.01667
75000 +: $ 0.01482
150000 +: $ 0.01235
Stock 3000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Base Part Number: RN131*
Description

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Introduction

RN1316 and LF are Transistors - Bipolar (BJT) - Single, Pre-Biased hybrid integrated circuit components that can be used for high frequency and power applications. They have been developed for the unique design of power amplifiers, high speed switches, and high frequency voltage amplifiers for both industrial and consumer applications.

Advantages

  • Low noise level
  • High efficiency power conversion
  • High switching speed
  • Small package and easy to mount
  • Low distortion

Application Fields

RN1316 and LF are ideal for a wide range of high voltage application fields, including:

  • High frequency operation amplifiers
  • RF transmitter circuits
  • Video amplifiers
  • High speed switching circuits
  • High frequency power converters
  • Class D audio amplifiers
  • Power management circuits

Working Principle

RN1316 and LF are operated by the bipolar Junction Transistor (BJT) design. A BJT acts as a switch, allowing current to flow through it when a voltage is applied to it. In the case of RN1316 and LF, a PNP BJT is used so the current flows to the emitter when the voltage is a positive value. The positive voltage or current applied to the emitter of the BJT is known as the biasing voltage. The biasing voltage is able to control the current flowing through the BJT and is used to regulate the output voltage of the RN1316 and LF components.

The design of the RN1316 and LF components allow them to achieve a high switching speed and excellent power conversion efficiency. This is made possible by the use of a thin oxide layer surrounding the PNP BJT, which allows for the fast switching of the current. This makes them ideal for use in applications such as high-frequency operation amplifiers, RF transmitters and high speed switching circuits.

Conclusion

The RN1316 and LF components are hybrid integrated circuit components that employ a bipolar Junction Transistor (BJT) design for high frequency and power applications. They offer a low noise level and high power conversion efficiency, making them ideal for a wide range of high voltage application fields including high frequency operation amplifiers, RF transmitters, video amplifiers, and high speed switching circuits. The BJT design of the components is used to regulate the current and output voltage and is surrounded by a thin oxide layer which allows for fast switching of the current, making them highly efficient.

The specific data is subject to PDF, and the above content is for reference

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