RN1306,LF Allicdata Electronics
Allicdata Part #:

RN1306LFTR-ND

Manufacturer Part#:

RN1306,LF

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1306,LF datasheetRN1306,LF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN1306 is a single, pre-biased bipolar junction transistor (BJT). It is well-suited to applications in motion control and industrial electronic applications including consumer, automotive, and commercial electronics. Introduced by Renesas, the RN1306 is an efficient, low power BJT that has been designed to help increase efficiency in a wide range of applications.

A bipolar junction transistor (BJT) is a type of technology that is used in a wide range of electronic devices. It is made up of two semiconductors – a "base" and an "emitter" – that are linked together. When the base voltage is applied to the junction, the current that flows from the base to the emitter allows a current to flow from the emitter to the collector. In a way, it mimics the actions of a mechanical switch in that it can be “opened” and “closed”.

The RN1306 is designed to be pre-biased, meaning that there is a voltage or current already present at the base when the device is powered up. When the device is powered up, the current that flows from the base to the emitter carries the bias voltage or current, allowing a current to flow from the emitter to the collector. This allows the RN1306 to be used in applications that need a current pre-set before the device is switched on. In addition, the RN1306 can be "ganged" so that multiple devices can be turned on at the same time with one activating signal, allowing multiple devices to operate in a synchronized and efficient manner.

The RN1306 is a low power BJT, meaning it is designed to allow the current to be shut off at a very low power level. This allows the device to remain efficient throughout its operation and helps to reduce the risk of overheating and the potential for a short circuit. The low power feature also helps to keep the temperature of the device low, allowing for longer life expectancy. In addition, the RN1306 is designed with a high-performance output stage, which ensures a high-current output from the device.

The RN1306 can be used in a variety of applications, especially motion control systems, industrial electronics and consumer, commercial, and automotive electronics. By adding a further layer of control, the RN1306 can be used to increase the efficiency and accuracy of motion control systems, allowing more precise and faster movement of parts in a production line. Additionally, the low power feature can help to lower energy costs by allowing the device to be turned off after operations are complete. Furthermore, the high-current output capability can be used to control other devices, like motors, pumps, or valves, increasing their efficacy and the overall efficiency of the system.

In conclusion, the RN1306 is a pre-biased, single bipolar junction transistor (BJT) that is designed to achieve higher efficiency and greater control in a wide range of applications. Its low power feature and high-performance output stage make it particularly useful for motion control and industrial electronic devices, while its ganging capabilities can improve the synchronizing and efficiency of multiple applications. By using the RN1306, designers can improve the functionality, accuracy, and cost-effectiveness of their electronic designs.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN13" Included word is 26
Part Number Manufacturer Price Quantity Description
RN1301,LF Toshiba Semi... 0.02 $ 30000 TRANS PREBIAS NPN 0.1W US...
RN1308,LF Toshiba Semi... 0.02 $ 6000 TRANS PREBIAS NPN 0.1W US...
RN1316,LF Toshiba Semi... 0.03 $ 3000 TRANS PREBIAS NPN 0.1W US...
RN1305,LF Toshiba Semi... 0.04 $ 9000 TRANS PREBIAS NPN 0.1W US...
RN1306,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1318(TE85L,F) Toshiba Semi... 0.03 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1312(TE85L,F) Toshiba Semi... 0.04 $ 3000 TRANS PREBIAS NPN 0.15W U...
RN1313(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS NPN 0.15W U...
RN1302,LF Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1309,LF Toshiba Semi... 0.02 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1317(TE85L,F) Toshiba Semi... 0.03 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1304,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM PLN (LF) TRA...
RN1307,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1311,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1315,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1314(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1303(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1310(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1309(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN131C/RM Microchip Te... 21.96 $ 622 RF TXRX MOD WIFI CHIP + U...
RN131G-I/RM Microchip Te... 25.25 $ 777 RF TXRX MOD WIFI CHIP + U...
RN131C/RM481 Microchip Te... 21.96 $ 280 RF TXRX MODULE WIFI CHIP ...
RN131G-I/RM481 Microchip Te... 25.25 $ 677 RF TXRX MODULE WIFI CHIP ...
RN131G-I/RM475 Microchip Te... 25.25 $ 119 RF TXRX MOD WIFI CHIP + U...
RN131C/RM475 Microchip Te... 21.96 $ 35 RF TXRX MOD WIFI CHIP + U...
RN134-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MOD WIFI CHIP + U...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics