RN1312(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN1312(TE85LF)TR-ND |
Manufacturer Part#: |
RN1312(TE85L,F) |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.15W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1312(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.03043 |
6000 +: | $ 0.02646 |
15000 +: | $ 0.02249 |
30000 +: | $ 0.02117 |
75000 +: | $ 0.01985 |
150000 +: | $ 0.01764 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Base Part Number: | RN131* |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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RN1312(TE85L,F) is a single, pre-biased bipolar junction transistor. This type of transistor is commonly used in a wide range of applications, varying from consumer electronics to industrial applications. It is used in a variety of circuit configurations and has a number of different characteristics. This article will discuss the application field and working principle of the RN1312(TE85L,F).
In terms of applications, the RN1312(TE85L,F) is often used in amplifier circuits, voltage regulator circuits, and oscillator circuits. In these applications, the transistor allows for precise control of the current flow through the circuit, thus controlling the performance of the circuit. Additionally, the RN1312(TE85L,F) provides high switching speed, high precision, and good efficiency. It is also used in a wide range of power switching and analog applications.
In terms of working principle, the RN1312(TE85L,F) is a three-terminal device that functions as a voltage amplifier. The three terminals are the emitter, the collector, and the base. The emitter terminal is used to provide the input signal, and the collector terminal is used to receive the amplified signal. When a small voltage is applied to the base terminal, the emitter-collector current is amplified proportionally. This allows the transistor to be used as an amplifier with precise and controlled output signals.
The RN1312(TE85L,F) also features a pre-biased design, which reduces the startup time and operating time, and also improves the efficiency of the overall device. This pre-biased design makes the transistor suitable for low-power applications, as it does not require a large power supply to start up and can operate for prolonged periods of time without the need for high-current control.
Overall, the RN1312(TE85L,F) is a single, pre-biased bipolar junction transistor that is used in a wide range of applications. It is commonly used in amplifier circuits, voltage regulator circuits, and oscillator circuits as it provides precise current control and high efficiency. Additionally, it features a pre-biased design which reduces the startup time, operation time, and overall power consumption.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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