Allicdata Part #: | RN1315LF-ND |
Manufacturer Part#: |
RN1315,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F USM TRANSISTOR PD 100MW |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1315,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02434 |
Specifications
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Description
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RN1315 is a single, pre-biased transistor, a type of bipolar junction transistor (BJT). It is an excellent choice for low-power applications, such as driving and controlling loads that require a low-power, low-voltage, and low-cost solution.A BJT, also called a bipolar transistor, is a semiconductor device that uses two PN junctions, or terminals, instead of three, allowing it to be used to regulate the current or voltage flowing from a power source to a load. These “junctions” are located between the base, collector and emitter terminals. The base is used to control the current flow by regulating the relative voltages applied to them. The collector is the output terminal that carries current to the load, while the emitter is the input terminal that carries current away from the load.The RN1315 BJT is pre-biased, meaning that some form of bias voltage is already applied to it in order to maintain an optimized operating point. This is beneficial in that it prevents the need to adjust operating points to fit different operating conditions. Theoretically, no external bias circuit is required to operate the transistor.The RN1315’s maximum power rating is 25mW and it operates on a supply voltage of 6V. Its amplitude-frequency gain of 45 dB is relatively low compared to other BJTs in its class, but is good for low-power applications. The device’s high-frequency response rises quickly, allowing for low-noise operation. The RN1315 has a maximum current gain of 75, a common-emitter saturation frequency of 5MHz, and a maximum collector-emitter voltage of 6V.In its most common application, the RN1315 is used in low-noise circuits, to drive and control loads. It is also ideal for CMOS circuits and analog-to-digital converters. Due to its relatively low power ratings and operating voltage, this BJT is suitable for use in low-voltage applications, such as those found in automotive and industrial applications.In summary, the RN1315 is a single, pre-biased bipolar junction transistor designed for low-power applications. Its low-voltage and low-current requirements make it suitable for a wide range of applications, from driving and controlling loads to low-noise circuits and analog-to-digital converters. Due to its pre-biased nature, no external bias circuit is required for operation.
The specific data is subject to PDF, and the above content is for reference
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