RN1305,LF Allicdata Electronics
Allicdata Part #:

RN1305LFTR-ND

Manufacturer Part#:

RN1305,LF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1305,LF datasheetRN1305,LF Datasheet/PDF
Quantity: 9000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03043
6000 +: $ 0.02646
15000 +: $ 0.02249
30000 +: $ 0.02117
75000 +: $ 0.01985
150000 +: $ 0.01764
Stock 9000Can Ship Immediately
$ 0.04
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The RN1305 LF Pre-Biased Single Bipolar Junction Transistor (BJT) is a small and powerful device that is widely used for a variety of applications. It is usually used for switching, amplification, timing, and power transfer.

This transistor is designed to provide high current and voltage gain. It has a high switching speed, low power consumption, and good temperature stability. It can also withstand very high temperatures. The RN1305 has an integrated ESD diode that protects the device and its components from damage.

The RN1305 is a very small package that fits into many applications. The body size of the transistor is only about 4 millimeters square. This small size makes it easy to incorporate into a wide variety of electronic and mechanical designs. The transistor has a significantly low on-resistance and low capacitance, which makes it suitable for high-speed switching.

The RN1305 transistor is available in a variety of configurations, including complementary and single-ended types. The transistor is designed for biasing and is pre-biased when shipped. This means that the device can be used for both n-channel and p-channel transistors.

The RN1305 transistor is a voltage-controlled device. It has an input and an output. The input is controlled by one gate, while the output is connected to the other gate. The input is used to control the output, which is then used to power an external device. Depending on the intended application, the input and output can be used to power different devices, such as switching a motor, controlling a light, or controlling a voltage.

The RN1305 also has a low on-resistance and high-frequency switching capabilities. It has fast switching speed and a low output capacitance. This makes the transistor suitable for high-power switching applications. Its fast switching speed also makes it suitable for high-speed logic-level applications.

The RN1305 has a wide range of applications in the telecommunications, medical, automotive, and industrial fields. In the automotive field, it is used for controlling the power supply for air conditioning systems and for controlling ignition systems. In the medical field, it is used for controlling medical devices, such as imaging systems and pacemakers. In the industrial field, it is used for controlling industrial equipment and for switching applications. The RN1305 is also used in the telecommunications field for switching and distribution.

The RN1305 pre-biased single bipolar junction transistor is a powerful and versatile device that is suitable for a variety of applications. Its small size, high current and voltage gain, fast switching speed, and low power consumption make it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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