RN1304,LF Allicdata Electronics
Allicdata Part #:

RN1304LF-ND

Manufacturer Part#:

RN1304,LF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F USM PLN (LF) TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1304,LF datasheetRN1304,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02434
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

. Transistors - Bipolar (BJT) - Single, Pre-Biased

RN1304,LF application field and working principle

The RN1304,LF is a pre-biased single transistor, which is specially designed for use in high-temperature thermal and electrical applications. It is typically used in high-power, high-voltage and high-temperature switching circuits, operating at temperatures up to 250 °C.

By design, the RN 1304,LF optimizes the electrical characteristics of the device by providing an integrated pre-bias circuit. This pre-bias circuit, which incorporates a Schottky diode, provides an additional level of protection and enhances the efficiency of the device in a wide range of challenging operations, including those with high voltage, high temperature and high power.

The operation of the pre-bias circuit is based on the principles of ESD protection, which means that it can withstand high levels of electrical stress and can help protect the device in cases where it is exposed to large voltages. As a result, the RN 1304,LF can be used in devices that require reliable high-voltage control and stability in high-power, high-temperature applications.

The RN 1304,LF is a BJT device, meaning that it has two collector/emitter terminals and can be used in a variety of configurations. In addition, it can be operated in either a common-source or a common-gate configuration. It can also be used in a low-voltage, high-current configuration, or in a high-voltage, low-current configuration, depending on the application.

The device can be used in a wide range of applications, such as switching circuits, power conversion, motor control, and other high-power applications. Its wide range of operating temperatures, combined with its integrated pre-bias circuit, make it an ideal choice for applications that require high performance and long-term reliability.

In conclusion, the RN1304,LF is a pre-biased BJT transistor designed for use in high-temperature thermal and electrical applications. Its pre-bias circuit helps to provide additional protection and offer greater stability, and its wide operating temperature range allows for reliable operation in challenging conditions.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN13" Included word is 26
Part Number Manufacturer Price Quantity Description
RN1301,LF Toshiba Semi... 0.02 $ 30000 TRANS PREBIAS NPN 0.1W US...
RN1308,LF Toshiba Semi... 0.02 $ 6000 TRANS PREBIAS NPN 0.1W US...
RN1316,LF Toshiba Semi... 0.03 $ 3000 TRANS PREBIAS NPN 0.1W US...
RN1305,LF Toshiba Semi... 0.04 $ 9000 TRANS PREBIAS NPN 0.1W US...
RN1306,LF Toshiba Semi... 0.02 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1318(TE85L,F) Toshiba Semi... 0.03 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1312(TE85L,F) Toshiba Semi... 0.04 $ 3000 TRANS PREBIAS NPN 0.15W U...
RN1313(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS NPN 0.15W U...
RN1302,LF Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1309,LF Toshiba Semi... 0.02 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1317(TE85L,F) Toshiba Semi... 0.03 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1304,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM PLN (LF) TRA...
RN1307,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1311,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1315,LF Toshiba Semi... 0.03 $ 1000 X34 PB-F USM TRANSISTOR P...
RN1314(TE85L,F) Toshiba Semi... 0.04 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1303(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1310(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN1309(TE85L,F) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS NPN 0.1W US...
RN131C/RM Microchip Te... 21.96 $ 622 RF TXRX MOD WIFI CHIP + U...
RN131G-I/RM Microchip Te... 25.25 $ 777 RF TXRX MOD WIFI CHIP + U...
RN131C/RM481 Microchip Te... 21.96 $ 280 RF TXRX MODULE WIFI CHIP ...
RN131G-I/RM481 Microchip Te... 25.25 $ 677 RF TXRX MODULE WIFI CHIP ...
RN131G-I/RM475 Microchip Te... 25.25 $ 119 RF TXRX MOD WIFI CHIP + U...
RN131C/RM475 Microchip Te... 21.96 $ 35 RF TXRX MOD WIFI CHIP + U...
RN134-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MOD WIFI CHIP + U...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics