Allicdata Part #: | RN1304LF-ND |
Manufacturer Part#: |
RN1304,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F USM PLN (LF) TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1304,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02434 |
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.RN1304,LF application field and working principle
The RN1304,LF is a pre-biased single transistor, which is specially designed for use in high-temperature thermal and electrical applications. It is typically used in high-power, high-voltage and high-temperature switching circuits, operating at temperatures up to 250 °C.
By design, the RN 1304,LF optimizes the electrical characteristics of the device by providing an integrated pre-bias circuit. This pre-bias circuit, which incorporates a Schottky diode, provides an additional level of protection and enhances the efficiency of the device in a wide range of challenging operations, including those with high voltage, high temperature and high power.
The operation of the pre-bias circuit is based on the principles of ESD protection, which means that it can withstand high levels of electrical stress and can help protect the device in cases where it is exposed to large voltages. As a result, the RN 1304,LF can be used in devices that require reliable high-voltage control and stability in high-power, high-temperature applications.
The RN 1304,LF is a BJT device, meaning that it has two collector/emitter terminals and can be used in a variety of configurations. In addition, it can be operated in either a common-source or a common-gate configuration. It can also be used in a low-voltage, high-current configuration, or in a high-voltage, low-current configuration, depending on the application.
The device can be used in a wide range of applications, such as switching circuits, power conversion, motor control, and other high-power applications. Its wide range of operating temperatures, combined with its integrated pre-bias circuit, make it an ideal choice for applications that require high performance and long-term reliability.
In conclusion, the RN1304,LF is a pre-biased BJT transistor designed for use in high-temperature thermal and electrical applications. Its pre-bias circuit helps to provide additional protection and offer greater stability, and its wide operating temperature range allows for reliable operation in challenging conditions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RN1301,LF | Toshiba Semi... | 0.02 $ | 30000 | TRANS PREBIAS NPN 0.1W US... |
RN1308,LF | Toshiba Semi... | 0.02 $ | 6000 | TRANS PREBIAS NPN 0.1W US... |
RN1316,LF | Toshiba Semi... | 0.03 $ | 3000 | TRANS PREBIAS NPN 0.1W US... |
RN1305,LF | Toshiba Semi... | 0.04 $ | 9000 | TRANS PREBIAS NPN 0.1W US... |
RN1306,LF | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1318(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1312(TE85L,F) | Toshiba Semi... | 0.04 $ | 3000 | TRANS PREBIAS NPN 0.15W U... |
RN1313(TE85L,F) | Toshiba Semi... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.15W U... |
RN1302,LF | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1309,LF | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1317(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1304,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM PLN (LF) TRA... |
RN1307,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1311,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1315,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1314(TE85L,F) | Toshiba Semi... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1303(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1310(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1309(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN131C/RM | Microchip Te... | 21.96 $ | 622 | RF TXRX MOD WIFI CHIP + U... |
RN131G-I/RM | Microchip Te... | 25.25 $ | 777 | RF TXRX MOD WIFI CHIP + U... |
RN131C/RM481 | Microchip Te... | 21.96 $ | 280 | RF TXRX MODULE WIFI CHIP ... |
RN131G-I/RM481 | Microchip Te... | 25.25 $ | 677 | RF TXRX MODULE WIFI CHIP ... |
RN131G-I/RM475 | Microchip Te... | 25.25 $ | 119 | RF TXRX MOD WIFI CHIP + U... |
RN131C/RM475 | Microchip Te... | 21.96 $ | 35 | RF TXRX MOD WIFI CHIP + U... |
RN134-I/RM | Microchip Te... | 0.0 $ | 1000 | RF TXRX MOD WIFI CHIP + U... |
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...