Allicdata Part #: | RN1311LF-ND |
Manufacturer Part#: |
RN1311,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F USM TRANSISTOR PD 100MW |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1311,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02434 |
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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The RN1311,LF is a single prefabricated, pre-biased bipolar junction transistor (BJT). The transistor has a low-frequency, open-collector type, common-source configuration which is used for audio switching applications.
The BJT is a three-layer, semiconductor device that consists of a base, collector, and emitter. It is composed of two n-type semiconductor layers sandwiched between a p-type layer. This 3-layer structure allows the BJT to have multiple levels of current control, or amplification, allowing the device to control or amplify a small input current into a large output current.
A portion of the collectors current passes out of the emitter which is the products of bias current and the switching current. The voltage feedback and the emitter current determine the quiescent (or bias) point. This enables the transistor to operate with a given current when a pulse is passed through it. When the reset pulse is removed, the transistor will remain in a static, off state.
The open collector type configuration of the RN1311,LF provides stable, reliable operation when used with low-level switching loads. This is useful when cascading multiple switching circuits together, allowing a higher degree of current control and tighter restrictions on the gain of each switching stage.
The RN1311,LF also features an advanced low-noise design, making it an ideal choice for audio switching circuits. The low-noise design helps reduce distortion, improve the signal-to-noise ratio, and reduce unwanted noise artifacts in the audio signal.
Lastly, the transistor has a wide range of operating temperatures, allowing it to be used in high-temperature environments, such as in cars, without any issue. This makes it perfect for automotive applications, such as powertrain control.
In conclusion, the RN1311,LF is a single prefabricated, pre-biased BJT which is optimized for audio switching applications. Its low-noise design and wide operating temperature range make it perfect for automotive audio switching. The open collector configuration provides stable, reliable switching, allowing for tighter control and a higher gain for multiple cascading circuits.
The specific data is subject to PDF, and the above content is for reference
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