Allicdata Part #: | RN1309(TE85LF)TR-ND |
Manufacturer Part#: |
RN1309(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1309(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Base Part Number: | RN130* |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RN1309(TE85L,F) is classified as a single, pre-biased bipolar transistor. It is an NPN transistor that is widely used in the fields of power management, audio amplifications and radio-frequency (RF) applications. This article will explain the general principles of the application fields and working principles of this transistor.
The RN1309(TE85L,F) is used in various power management applications where a higher voltage is needed to control a smaller voltage. Examples of these include DC power supply systems, AC/DC converters, DC/DC converters and other power supply applications. In audio amplifications, this transistor is used to amplify the low-level signals of the input audio. It can be either direct-coupled to the output or indirect-coupled to the output. In radio-frequency (RF) applications, this transistor is used for impedance matching, as well as for amplifying the output.
The working principle of the RN1309(TE85L,F) is based on the two-wire principle. This means that it uses two wires instead of the conventional three-wire configuration. The two wires are the resistor-base and collector-emitter links. The two wires, when connected, form a two-wire network. This network is able to function as both a resistor-base and a collector-emitter links. The main benefit of the two-wire configuration is that it reduces the number of components needed to be connected. This can result in a cost saving as fewer components need to be purchased.
The RN1309(TE85L,F) also has a pre-biased collector that is used to create a voltage across the resistor-base and collector-emitter links. This voltage is then used to control the voltage level of the output. This feature of the transistor allows for a greater control over the output voltage as it is not reliant on the input current. This is therefore beneficial for applications where the input current may vary significantly.
In conclusion, the RN1309(TE85L,F) is a single, pre-biased bipolar transistor that is extremely versatile. The two-wire configuration reduces the number of components needed, which can help to reduce costs. The pre-biased collector also allows for greater control of the output voltage, which is beneficial for applications requiring a stable output. The RN1309(TE85L,F) is therefore widely used in power management, audio amplifications and radio-frequency (RF) applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RN1301,LF | Toshiba Semi... | 0.02 $ | 30000 | TRANS PREBIAS NPN 0.1W US... |
RN1308,LF | Toshiba Semi... | 0.02 $ | 6000 | TRANS PREBIAS NPN 0.1W US... |
RN1316,LF | Toshiba Semi... | 0.03 $ | 3000 | TRANS PREBIAS NPN 0.1W US... |
RN1305,LF | Toshiba Semi... | 0.04 $ | 9000 | TRANS PREBIAS NPN 0.1W US... |
RN1306,LF | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1318(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1312(TE85L,F) | Toshiba Semi... | 0.04 $ | 3000 | TRANS PREBIAS NPN 0.15W U... |
RN1313(TE85L,F) | Toshiba Semi... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.15W U... |
RN1302,LF | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1309,LF | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1317(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1304,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM PLN (LF) TRA... |
RN1307,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1311,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1315,LF | Toshiba Semi... | 0.03 $ | 1000 | X34 PB-F USM TRANSISTOR P... |
RN1314(TE85L,F) | Toshiba Semi... | 0.04 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1303(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1310(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1309(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN131C/RM | Microchip Te... | 21.96 $ | 622 | RF TXRX MOD WIFI CHIP + U... |
RN131G-I/RM | Microchip Te... | 25.25 $ | 777 | RF TXRX MOD WIFI CHIP + U... |
RN131C/RM481 | Microchip Te... | 21.96 $ | 280 | RF TXRX MODULE WIFI CHIP ... |
RN131G-I/RM481 | Microchip Te... | 25.25 $ | 677 | RF TXRX MODULE WIFI CHIP ... |
RN131G-I/RM475 | Microchip Te... | 25.25 $ | 119 | RF TXRX MOD WIFI CHIP + U... |
RN131C/RM475 | Microchip Te... | 21.96 $ | 35 | RF TXRX MOD WIFI CHIP + U... |
RN134-I/RM | Microchip Te... | 0.0 $ | 1000 | RF TXRX MOD WIFI CHIP + U... |
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...