RN1317(TE85L,F) Allicdata Electronics

RN1317(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN1317(TE85LF)TR-ND

Manufacturer Part#:

RN1317(TE85L,F)

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W USM
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1317(TE85L,F) datasheetRN1317(TE85L,F) Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02434
Stock 1000Can Ship Immediately
$ 0.03
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Base Part Number: RN131*
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 100mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Bipolar transistors, also known as BJTs, are two terminal semiconductor devices which, depending on how they are connected, can act as either a switch or an amplifier. The RN1317(TE85L,F) is a single, pre-biased BJT which has a wide range of applications. This article will cover its various uses, as well as its working principle.

The RN1317(TE85L,F) transistor is a PNP type BJT and comes in a TO-92 case. It operates with a DC current gain of 500 to 1500 and has a maximum collector emitter voltage of 40V. Due to its low price and wide availability, it has found its way into a wide range of electronic devices. Because it operates in the centimeter and sub-centimeter wave ranges, the transistor is also used in telecommunications and other radio frequency applications.

One of the more common applications of the RN1317(TE85L,F) is in low power FM radio circuits. It is commonly used as an oscillator and to provide linear amplification. It is also quite versatile as a driving component in integrated circuits (ICs) used for switching purposes. It is popular for use in LED control, motor control and electro-mechanical control applications.

An advantageous feature of the RN1317(TE85L,F) is that it is pre-biased. This means that the transistor has two leads already connected to a voltage source, which provides it with a base current. Pre-biasing a transistor can increase its performance in terms of power, speed and efficiency. Pre-biasing a transistor also reduces the complexity of a circuit, allowing it to be made smaller, lighter and less expensive.

So, how does the RN1317(TE85L,F) transistor work? A BJT works by controlling the current flow between its emitter and collector terminals. This is done by the use of a base electrode, which is connected to a voltage source. When current flows through the base electrode, a small fraction of it reaches the emitter, creating a current flow between the emitter and collector terminals. By controlling the current flow through the base electrode, the amount of current flowing between the emitter and collector can be changed. This is known as current gain and is the basis for the transistor\'s operation.

The RN1317(TE85L,F) transistor is also a great choice for use in temperature control, driver/sensor circuits and other applications that require precise amplification. It is also well suited for audio amplifier, switching and level detection designs.

The wide range of applications, pre-biasing feature and low cost make the RN1317(TE85L,F) an excellent choice as a versatile and reliable BJT. The transistor\'s operating principle and use of current gain are key to its success, making it one of the most dependable BJTs on the market today.

The specific data is subject to PDF, and the above content is for reference

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