RN1310(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN1310(TE85LF)TR-ND |
Manufacturer Part#: |
RN1310(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W USM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1310(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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A transistor is a semiconductor device used for amplifying or switching electronic signals and electrical power. Single, Pre-Biased transistors are a type of bipolar junction transistor. The pre-biased filter is a type of resistor based filter that is designed to provide stable gain over a range of frequencies. One type of pre-biased transistor is the RN1310(TE85L,F).
The RN1310(TE85L,F) is a pre-biased single transistor that is designed for general purpose applications. It is suitable for use in both analog and digital circuits and is manufactured using a high speed, low power process technology. The RN1310(TE85L,F) has a wide range of features, including low noise, high speed, wide bandwidth, and excellent gain bandwidth characteristics.
The RN1310(TE85L,F) can be used in a variety of applications, including audio amplifiers, switching circuits, logic circuits, data converters, and operational amplifiers. It is also used in microprocessors, memory chips, and other semiconductor devices as a current amplification element. It has a wide range of voltage and current ratings, so it can be used in a variety of applications.
The working principle of the RN1310(TE85L,F) involves the use of a collector-base junction, with the collector connected to the input signal and the base to the output signal. The collector-base junction is a p-n junction, and when the input signal is applied, the current flow through the junction is controlled by the amount of charge present at the base. As the input signal changes, the current will change as well. The amplified output is then available at the output.
The RN1310(TE85L,F) has an excellent dynamic range of operation due to its wide bandwidth and fast response time. The current gain is also high, which means the output can be amplified to the desired level quickly and accurately. The product is also designed to be resistant to static electricity and temperature variations, making it suitable for use in harsh environments.
The RN1310(TE85L,F) is an excellent choice for general purpose applications, as it is easy to use, has a wide range of features and functions, is reliable and cost effective. It is an excellent product to use in your applications, and it is sure to provide the performance levels you require.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RN1301,LF | Toshiba Semi... | 0.02 $ | 30000 | TRANS PREBIAS NPN 0.1W US... |
RN1308,LF | Toshiba Semi... | 0.02 $ | 6000 | TRANS PREBIAS NPN 0.1W US... |
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RN1305,LF | Toshiba Semi... | 0.04 $ | 9000 | TRANS PREBIAS NPN 0.1W US... |
RN1306,LF | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
RN1318(TE85L,F) | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS NPN 0.1W US... |
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