Allicdata Part #: | RN1307LF-ND |
Manufacturer Part#: |
RN1307,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F USM TRANSISTOR PD 100MW |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1307,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02434 |
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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Bipolar junction transistors (BJTs) are polarized transistors that consist of three semiconductor layers: an emitter, a base, and a collector. The RN1307 is a single pre-biased bipolar junction transistor (BJT) made with NPN technology. It is an integrated NPN transistor and resistor whose base-emitter junction is held in a partially forward-biased state during its fabrication. This feature provides an easy and convenient way to build an inverting pre-amplifier for audio applications.
The RN1307 is primarily used in audio applications such as amplifiers and pre-amplifiers. It is also used in analog switches and oscillators. It is commonly used in motor control circuits and is an important device in the control of power regulators. Its most common application is in stereo audio amplifiers and pre-amplifiers.
The working principle of the RN1307 is quite simple. It acts as a voltage-controlled current-regulating device. The transistor consists of two PN junctions - the base-emitter and the base-collector junctions. The base-emitter junction is forward biased while the base-collector junction is reverse biased. When a small current flows through the emitter, it is amplified by the transistor and appears at the collector. The voltage at the base of the transistor is the controlling factor for the amount of current through the transistor. By controlling the voltage at the base, the current gain of the transistor can be regulated.
The RN1307 has several advantages over other transistor devices. Its fabrication process is quite simple and it is relatively inexpensive. The pre-biased state of the transistor also reduces the amount of work required to design circuits using it. This makes it particularly suitable for use in simple analog circuits.
In summary, the RN1307 is a single pre-biased NPN bipolar junction transistor. It is primarily used in audio applications such as amplifiers and pre-amplifiers, as well as in other analog circuits. The working principle of the device is based on controlling a small current through the emitter and amplifying it through the base-collector junction. This allows the control of the current gain of the device. The pre-biased nature of the device makes it very suitable for use in simple analog circuits.
The specific data is subject to PDF, and the above content is for reference
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