RN4990FE,LF(CB Allicdata Electronics
Allicdata Part #:

RN4990FELF(CBTR-ND

Manufacturer Part#:

RN4990FE,LF(CB

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: RN4990FE,LF(CB datasheetRN4990FE,LF(CB Datasheet/PDF
Quantity: 1000
4000 +: $ 0.03043
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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RN4990FE,LF is a member of the pre-biased bipolar transistors family. It is an integrated configuration of two bi-polar transistors. This configuration is designed to provide the optimum performance in power amplification applications where a robust single device solution is required.

The RN4990FE,LF is constructed of two NPN bi-polar transistors connected in a Darlington configuration. The transistors are pre-biased by embedded resistors to reduce the need for external bias components. A single set of supply lines activates both transistors when correct power supply is applied. Because two transistors are connected in a single package, losses of power are minimized and a higher operating frequency is possible compared to the single device.

The RN4990FE,LF is a high power, low noise solution with very low distortion characteristics. This solution is ideal for applications in professional audio, medical instrumentation, remote sensing and other power amplification applications.

The RN4990FE,LF provides a high current gain of up to 200, operating up to 10 A of collector current, at voltages up to 100 V. The device also has excellent thermal stability andPower Dissipation (W). The device also has a high packing density that provides a number of advantages such as improved thermal management and higher power efficiency when compared to single transistors.

In addition to its low noise and distortion characteristics, the RN4990FE,LF is designed to be robust and reliable. It features an over-temperature protection circuit to limit maximum junction temperature and protect the device from thermal runaway and thermal stress. This protection circuit also helps to maintain consistent performance and power efficiency over time.

The RN4990FE,LF is also designed to be user friendly. It features a wide power supply range and has a low ripple base current, making it easy to drive in a wide range of applications. In addition, the device includes a soft start circuit that limits inrush current and reduces turn on time. This feature helps to reduce stress on the power supply and system components.

The RN4990FE,LF makes an excellent choice for power amplification in professional audio and other demanding applications. It features a high current gain and offers excellent linearity, low distortion, and low noise performance. It is robust and reliable, and its wide power supply range and wide range of operating conditions make it an ideal solution for a variety of power amplification applications.

The specific data is subject to PDF, and the above content is for reference

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