Allicdata Part #: | RN4981LF(CTTR-ND |
Manufacturer Part#: |
RN4981,LF(CT |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4981,LF(CT Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03347 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
Frequency - Transition: | 250MHz, 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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:The RN4981,LF (CT) bipolar junction transistor (BJT) array is a pre-biased device that is ideal for very fast switching applications, particularly in the fields of communication, telecommunications, instrumentation and digital signal processing. It is designed to operate at a high switching speed with a low propagation delay, allowing it to be used in applications such as high speed data transmission, data conversion, signal processing and switching.
A BJT array is a type of event driven device that has multiple transistor circuits integrated into a single body. It is a type of semiconductor device which contains multiple independent transistors and other semiconductor components. The typical BJT array contains two or more transistors that are separated by a common substrate. The primary advantages of the BJT array are their very low power consumption and high switching speed. The integrated array also allows for multiple transistors to be easily controlled and operated in unison. It is typically used in high speed switching applications because of its fast switching speed and its ability to minimize signal degradation.
The RN4981,LF (CT) is a pre-biased device, which means that its transistors are connected in parallel with a specific bias voltage applied to them. This results in the device having a specified switching time for each individual transistor. The operating voltage of the device is typically around 7V, and it also has a wide temperature range of -55 to +125 C. The device is also capable of operating in temperatures up to 150 C. This allows the device to be suitable for device applications in extreme temperature environments.
In addition to its fast switching speed, the RN4981,LF (CT) can also be used for switching and controlling signals in a variety of communication systems. It is capable of providing high speed communication with a low power consumption without interfering with other equipment in the network. It is designed for use in applications such as in base stations and cell phones where low latency is important.
The RN4981,LF (CT) has been developed for use in a variety of portable electronics, automotive systems, industrial applications and consumer products. It is designed to be used in a wide variety of digital and communication applications. The device is highly reliable and suitable for high speed switching applications. It is capable of providing high noise immunity, fast switching speed, high accuracy and low cost.
The RN4981,LF (CT) is a pre-biased BJT array that is highly efficient and reliable. It is ideal for very fast switching applications and can be used in a wide range of communication, automotive and consumer products. The device is also suitable for data conversion and signal processing applications. It is capable of providing high speed switching and a low power consumption. The integrated array also allows for multiple transistors to be easily controlled and operated in unison.
The specific data is subject to PDF, and the above content is for reference
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