RN4901,LF(CT Allicdata Electronics
Allicdata Part #:

RN4901LF(CTTR-ND

Manufacturer Part#:

RN4901,LF(CT

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: RN4901,LF(CT datasheetRN4901,LF(CT Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03195
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RNJ901LF is a pre-biased array of BJT transistors. It is a small package of transistors that is highly efficient and minimizes space requirements. It is used in many applications and is commonly found in consumer electronics, medical equipment and automotive electronics.

The RNJ901LF is a high-current device with a wide operating voltage range and is designed to be used in power supply systems as well as signal conditioning circuits. It can also be used in automotive and industrial electronics applications.

The RNJ901LF has two outputs and each output can be used independently. The outputs can be referenced separately with a voltage range of 0 to 3.8 V. The maximum current that can be provided by this transistor is 8 A. The maximum power dissipation is 10 W.

The RNJ901LF is available in a variety of packages including surface mount, through-hole, and DIP. It is also available in a range of power ratings. It is typically used in applications such as switch mode power supplies, DC-to-DC converters, inverters, and AC-to-DC power supplies.

The working principle of the RNJ901LF is based on the current gain of the BJT transistor. When the base-emitter voltage is applied, the electrons are pushed into the collector region, which increases the current flow through the transistor. This current gain produces more power than the input power, thus increasing efficiency and reducing size requirements.

The RNJ901LF is a highly efficient and reliable transistor when compared to other BJT arrays. This type of device is capable of handling high current and voltage demands, which makes it suitable for a variety of applications. Its compact size and low power consumption makes it an ideal choice for many projects.

The RNJ901LF is a pre-biased array of BJT transistors that is highly efficient and minimizes space requirements. It is available in a variety of packages and various power ratings. It has two output stages that can be referenced separately, and its operating voltage range is 0 to 3.8 V. Its maximum current rating is 8 A and its maximum power dissipation is 10 W. The RNJ901LF works on the principle of current gain of the BJT transistor and is suitable for applications such as switch mode power supplies, DC-to-DC converters, inverters, and AC-to-DC power supplies.

The specific data is subject to PDF, and the above content is for reference

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