RS1E130GNTB Allicdata Electronics

RS1E130GNTB Discrete Semiconductor Products

Allicdata Part #:

RS1E130GNTBTR-ND

Manufacturer Part#:

RS1E130GNTB

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V 13A 8-HSOP
More Detail: N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface...
DataSheet: RS1E130GNTB datasheetRS1E130GNTB Datasheet/PDF
Quantity: 1000
2500 +: $ 0.13364
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RS1E130GNTB is an insulated gate bi-polar transistor, more popularly known as a MOSFET. This type of transistor is used in a variety of applications and today is considered the primary way of controlling and supplying power in a circuit. The RS1E130GNTB is a single MOSFET, meaning it only requires a single gate to control its operation. As such, it is frequently used as a part of many digital or power control circuits.

One of the most common application fields of the RS1E130GNTB is in power management and control. MOSFETs are a popular way of controlling power in digital circuits, as they are able to switch on and off very quickly. This makes them useful for applications where fast on and off times are needed, such as short-term current regulation. Additionally, MOSFETs are often used as power switches, in order to efficiently control the amount of power being used in a given circuit.

The RS1E130GNTB also has applications in the field of logic circuits. Thanks to their quick switching times and ability to control current, MOSFETs are often used in logic gate circuits in order to create more complex logic operations. Furthermore, MOSFETs can be easily cascaded to create larger, more complicated logic circuits. This makes them popular for use in digital signal processing, where multiple logic operations are needed to achieve a desired output.

The working principle of the RS1E130GNTB stems from its insulated gate bi-polar transistor nature. Essentially, this type of transistor is able to control and pass current using a single gate. The gate is used to control the flow of charge carriers in order to either turn on or turn off the transistor. If the gate is activated, then the current can flow, while if the gate is not activated, then the current will not be able to pass. This allows the RS1E130GNTB to be used as a switch, in order to turn a current on or off as needed.

The RS1E130GNTB is a powerful and highly versatile device that can be employed in a variety of applications. Its insulated gate bi-polar transistor technology allows for the quick and efficient control of current, making it ideal for use in logic gates and power management circuits. Furthermore, its single gate design allows it to be easily integrated into larger and more complicated systems, making it even more useful. In short, the RS1E130GNTB is a simple but powerful device that can be used to great effect in many different areas.

The specific data is subject to PDF, and the above content is for reference

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