RS1E280GNTB Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RS1E280GNTB Application Field and Working Principle

RS1E280GNTB is a dual N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), developed by Renesas semiconductor. It is two separate systems integrated on the same chip, designed for high-power applications. It is suitable for power management applications including power switching, linear regulators, and DC-DC converters. It has very low Rds-on and is suitable for applications requiring good efficiency, high power switching and low power loss.

Characteristics of RS1E280GNTB

The features of the RS1E280GNTB include:

• Low threshold voltage.
• High level of breakdown voltage.
• Very low on-resistance.
• High performance in terms of efficiency.
• Low input capacitance.
• Low output capacitance.
• High switch-on and switch-off speed.

Applications of RS1E280GNTB

RS1E280GNTB is suitable for automotive applications such as power train and body computer systems. This MOSFET can be used as power switch in various power management and switching applications. It is also used in low voltage and high current applications. Some of the applications that can benefit from the device’s features include:

• DC/DC converters.
• AC/DC converters.
• Power supplies.
• Battery chargers.
• Power inverters.
• DC motor drive systems.
• Electronic load switching.
• Electronic load control.
• Lighting controls.

Working Principle of RS1E280GNTB

RS1E280GNTB is an enhancement mode MOSFET and its operation is based on the principle of capacitance. The device consists of two separate systems, a source-to-drain FET and a source-to-gate FET with independent gates. When the gate voltage is higher than the threshold voltage, the device is in enhancement mode and the source-to-drain FET is operational, allowing current to flow between the source and the drain. When the gate voltage is lower than the threshold voltage, the device is in depletion mode and the source-to-drain FET is turned off. The source-to-gate FET is used to turn the device off completely rather than just to reduce the drain current.

The gate-to-source capacitance of the device provides low-power switching capability, allowing the device to switch on and off quickly. This fast switching helps reduce the effects of transient voltages and currents, providing better performance in power management applications where high efficiency and low power loss are required.

Conclusion

RS1E280GNTB is a dual N-Channel enhancement mode MOSFET designed for high-power applications, such as power management, power switching, and DC-DC conversion. It has very low Rds-on, high breakdown voltage, and low input and output capacitance, which make it suitable for applications where high efficiency and low power loss are required. It has a fast switching capability which helps reduce the effects of transient voltages and currents. The device is suitable for various applications including DC/DC converters, AC/DC converters, power supplies, battery chargers, power inverters, DC motor drive systems, electronic load switching, electronic load control, and lighting controls.

The specific data is subject to PDF, and the above content is for reference