RS1E350BNTB Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-HSOP
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7900pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	185nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	35A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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RS1E350BNTB Application Field and Working Principle

RS1E350BNTB is a junction field-effect transistor (JFET) manufactured by Renesas Electronics. It is used in a variety of applications and can be found in many digital and analog circuit designs. This article will outline the applications of RS1E350BNTB and explain its working principle.

Applications of RS1E350BNTB

RS1E350BNTB is a low-power and low-noise JFET with a wide voltage range. It is used in applications such as switching circuits, amplifier circuits, and control circuits, as well as in control logic and gate driver circuits. This JFET is also suitable for use in audio applications and low-noise preamps. RS1E350BNTB can also be used in applications that require high input impedance, low noise, and high switching speed. It is useful in analog circuits such as audio preamps, video amplifiers, comparators, and active filters. Additionally, this JFET is used in automotive electronics such as engine control modules and climate control systems, as well as in thermostats and remote sensors.

Working Principle of RS1E350BNTB

RS1E350BNTB is a type of JFET, which is an insulated gate FET (IGFET) that consists of a p-type semiconductor material between two n-type semiconductor materials. The gate of the JFET is insulated from the semiconductor material and the current flow. A voltage applied to the gate of the JFET will affect the conductivity of the semiconductor material between the two n-type materials and control the current flow between them. When a positive voltage is applied to the gate of the RS1E350BNTB, it will increase the hole concentration in the channel and decrease its resistance, thus allowing more current to flow between the n-type materials. Conversely, when a negative voltage is applied, it will increase the channel resistance and decrease the current flow. RS1E350BNTB has a very high input impedance, typically in the range of 107-109Ω, due to its reverse built-in potential. Consequently, it can be used to address signals with high-frequency components without introducing distortion. Additionally, due to its low threshold voltage, RS1E350BNTB can be used to switch relatively large amounts of current with low power.

Conclusion

RS1E350BNTB is a low-power and low-noise junction field-effect transistor that is ideal for applications that require high-input impedance and high-frequency switching. It is used in a variety of applications, including digital and analog circuits, audio preamps, video amplifiers, comparators, and active filters. RS1E350BNTB works by applying a voltage to the gate to control the conductivity of the semiconductor material and the current flow.

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