RS1E300GNTB Discrete Semiconductor Products |
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| Allicdata Part #: | RS1E300GNTBTR-ND |
| Manufacturer Part#: |
RS1E300GNTB |
| Price: | $ 0.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 30V 30A 8-HSOP |
| More Detail: | N-Channel 30V 30A (Ta) 3W (Ta), 33W (Tc) Surface M... |
| DataSheet: | RS1E300GNTB Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.28806 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-HSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 39.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The RS1E300GNTB is a lateral N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) designed for use in audio equipment, power supplies and other power control applications. It is a single MOSFET with a maximum drain current rating of 30A, making it ideal for use in high-power applications.
MOSFETs are voltage-controlled devices that can be used to amplify or attenuate a signal, as they have very high input impedance and low output impedance. They can also be used as switches, to quickly turn a signal on or off, or as in the case of the RS1E300GNTB, to control the current flow in circuits. Unlike bipolar transistors, MOSFETs have a gate terminal, which controls the flow of drain current.
The RS1E300GNTB can be used in circuits where current or voltage needs to be regulated. It has a very low on-state resistance and is therefore able to dissipate less power than a larger equivalent MOSFET and can be used for high-side switching, meaning it can be used to control the current to a load, such as a motor or solenoid, without the need for additional components such as a transistor or common-source amplifier.
In addition, the RS1E300GNTB has a very low gate threshold voltage and gate-source capacitance, making it ideal for use in high-frequency applications, as well as making it more suitable for switching applications, where a constant current must be maintained. This ensures that the switch doesn’t show any measurable voltage drop when the power applied is low.
The RS1E300GNTB can be used in applications where great power control is required, such as in motor control applications, where the MOSFET can act as a variable speed controller. It is also suitable for power supplies, as it can be used to regulate the current and voltage. It can also be used in audio equipment and signal amplifiers, as it is able to effectively attenuate or amplify signals.
The RS1E300GNTB is a very versatile device that can be used for a variety of applications. Its low on-state resistance and gate threshold voltage, coupled with its very high input and low output impedance make it ideal for use in power control and signal amplification applications. It is also suitable for use in high-frequency applications, such as motor control, as its low gate capacitance ensures that it operates reliably over a range of frequencies without suffering from any measurable voltage drops.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RS1E200GNTB | ROHM Semicon... | 0.22 $ | 1000 | MOSFET N-CH 30V 20A 8-HSO... |
| RS1E320GNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 32A 8-HSO... |
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RS1E300GNTB Datasheet/PDF