RS1E280BNTB

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The RS1E280BNTB is a single N-Channel power MOSFET manufactured by ON Semiconductor and designed for switching, load switching and level-shifting applications. This versatile device is suitable for a wide range of applications including motor control, linear and switching power supplies, DC-DC converters and audio amplifiers.

The RS1E280BNTB is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed with a metal-gate electrode and a polysilicon gate electrode stack. The metal gate electrode and polysilicon gate electrode stack enables the RS1E280BNTB to have both N-Channel and P-Channel device hierarchies, effective die sizes and excellent thermal performance.

The RS1E280BNTB provides significant power switching capabilities for desirable applications. It has a maximum drain-source voltage rating of 220 volts, a maximum drain current rating of 41 amps, a maximum gate-source voltage rating of 25 volts, a maximum on-state resistance of 12 milliohm and a total gate charge rating of 540 nC. The RS1E280BNTB is capable of supplying load up to 10 watts of power.

The RS1E280BNTB works on the principle of a metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are majority carriers, whereas a bipolar junction transistor acts as an amplifier or switch by using an input signal to control a large current or voltage between two terminals. MOSFETs are also considered nonlinear devices as they exhibit both linear and nonlinear regions of operation. The MOSFET acts as a switch that controls the flow of electrons from the source to the drain by means of the gate voltage.

The RS1E280BNTB\'s gate potential is held at a constant level determined by the gate bias voltage. When the gate voltage is held below the threshold voltage, the MOSFET is off and no current can flow between the source and the drain. When the gate voltage is increased to above the threshold voltage, the MOSFET is on and current is allowed to flow between the source and the drain. Thus the RS1E280BNTB is a voltage controlled device that can be used to switch large currents or voltages between two terminals.

The RS1E280BNTB is used in a variety of applications. It is commonly used as an electronic switch in motor control, linear and switching power supplies, DC-DC converters, audio amplifiers and many other types of applications. It is also used in more unique applications such as anti-lock brake systems, airbag systems and body control modules. Additionally, the RS1E280BNTB can be used as a voltage-controlled rectifier, which is used to control the power supply of loads.

In conclusion, the RS1E280BNTB is a versatile N-Channel power MOSFET designed for switching, load switching and level-shifting applications. It is capable of supplying load up to 10 watts of power and is suitable for a wide range of applications including motor control, linear and switching power supplies, DC-DC converters and audio amplifiers. The RS1E280BNTB works on the principle of a MOSFET, which acts as a switch that controls the flow of electrons from the source to the drain. The RS1E280BNTB is a voltage-controlled device that can be used to switch large currents or voltages between two terminals.

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