| Allicdata Part #: | RS1E240BNTBTR-ND |
| Manufacturer Part#: |
RS1E240BNTB |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 30V 24A 8HSOP |
| More Detail: | N-Channel 30V 24A (Ta) 3W (Ta), 30W (Tc) Surface M... |
| DataSheet: | RS1E240BNTB Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.14711 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-HSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 24A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RS1E240BNTB is a type of transistor belonging to the family of FETs, MOSFETs – Single. The individual components of this circuit are semiconductor devices, capable of providing relatively stable performance for a variety of applications in a wide range of environments.
Generally, the RS1E240BNTB is characterized by its ability to provide excellent performance in power supply applications. It has a high input impedance and a low drain-to-source leakage current, which makes it an ideal choice for engineering systems. It is also used in optical audio circuits, because it is suitable for high frequency movements. In addition, it can be used as an amplifier element, capable of amplifying small signals with good fidelity.
The working principle behind the RS1E240BNTB is based on the principles of the MOSFETs, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. In essence, the device works on the exchange of electrons between the gate and the drain, when a voltage is applied to the gate-source. This exchange process creates a conducting channel between the drain and the source, allowing for efficient electrical conduction.
To ensure high levels of performance, designers indicate that the RS1E240BNTB should always be used in combination with a driver circuit in order to maximize the device’s characteristics, such as efficiency and power dissipation. Since the device has a small parasitic capacitance, it cannot be directly connected to the voltage supply without a driver circuit.
Another factor to consider when using the RS1E240BNTB is the peak transient current through the device. This value should be determined before attempting to drive the device, as improper power handling can cause permanent damage. The power rating of the device also requires consideration, as this will determine the maximum amount of power that the device can handle.
The amount of potential flowing through the device is also of great importance. The junction temperature of the device should be kept below the recommended one in order to guarantee proper performance. This is achieved with proper engineering, involving a number of various techniques such as proper lead and heat sink design.
In conclusion, the RS1E240BNTB is a versatile device capable of providing excellent performance in a number of applications. Approaches that ensure proper power handling are essential in order to guarantee the best possible results and performance in any application. The principles behind the MOSFETs working scheme need to be understood and adhered to in order to ensure efficient operation of the device.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RS1E200GNTB | ROHM Semicon... | 0.22 $ | 1000 | MOSFET N-CH 30V 20A 8-HSO... |
| RS1E320GNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 32A 8-HSO... |
| RS1E300GNTB | ROHM Semicon... | 0.32 $ | 1000 | MOSFET N-CH 30V 30A 8-HSO... |
| RS1E170GNTB | ROHM Semicon... | 0.18 $ | 1000 | MOSFET N-CH 30V 17A 8-HSO... |
| RS1E200BNTB | ROHM Semicon... | 0.15 $ | 1000 | MOSFET N-CH 30V 20A 8HSOP... |
| RS1E240BNTB | ROHM Semicon... | 0.16 $ | 1000 | MOSFET N-CH 30V 24A 8HSOP... |
| RS1E240GNTB | ROHM Semicon... | 0.25 $ | 5000 | MOSFET N-CH 30V 24A 8-HSO... |
| RS1E180BNTB | ROHM Semicon... | 0.15 $ | 1000 | MOSFET N-CHANNEL 30V 60A ... |
| RS1E280BNTB | ROHM Semicon... | 0.2 $ | 1000 | MOSFET N-CH 30V 28A 8HSOP... |
| RS1E350BNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 35A 8HSOP... |
| RS1E280GNTB | ROHM Semicon... | 0.28 $ | 2500 | MOSFET N-CH 30V 28A 8-HSO... |
| RS1E150GNTB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 15A 8-HSO... |
| RS1E130GNTB | ROHM Semicon... | 0.15 $ | 1000 | MOSFET N-CH 30V 13A 8-HSO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
RS1E240BNTB Datasheet/PDF