RS1E240BNTB Allicdata Electronics
Allicdata Part #:

RS1E240BNTBTR-ND

Manufacturer Part#:

RS1E240BNTB

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V 24A 8HSOP
More Detail: N-Channel 30V 24A (Ta) 3W (Ta), 30W (Tc) Surface M...
DataSheet: RS1E240BNTB datasheetRS1E240BNTB Datasheet/PDF
Quantity: 1000
2500 +: $ 0.14711
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RS1E240BNTB is a type of transistor belonging to the family of FETs, MOSFETs – Single. The individual components of this circuit are semiconductor devices, capable of providing relatively stable performance for a variety of applications in a wide range of environments.

Generally, the RS1E240BNTB is characterized by its ability to provide excellent performance in power supply applications. It has a high input impedance and a low drain-to-source leakage current, which makes it an ideal choice for engineering systems. It is also used in optical audio circuits, because it is suitable for high frequency movements. In addition, it can be used as an amplifier element, capable of amplifying small signals with good fidelity.

The working principle behind the RS1E240BNTB is based on the principles of the MOSFETs, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. In essence, the device works on the exchange of electrons between the gate and the drain, when a voltage is applied to the gate-source. This exchange process creates a conducting channel between the drain and the source, allowing for efficient electrical conduction.

To ensure high levels of performance, designers indicate that the RS1E240BNTB should always be used in combination with a driver circuit in order to maximize the device’s characteristics, such as efficiency and power dissipation. Since the device has a small parasitic capacitance, it cannot be directly connected to the voltage supply without a driver circuit.

Another factor to consider when using the RS1E240BNTB is the peak transient current through the device. This value should be determined before attempting to drive the device, as improper power handling can cause permanent damage. The power rating of the device also requires consideration, as this will determine the maximum amount of power that the device can handle.

The amount of potential flowing through the device is also of great importance. The junction temperature of the device should be kept below the recommended one in order to guarantee proper performance. This is achieved with proper engineering, involving a number of various techniques such as proper lead and heat sink design.

In conclusion, the RS1E240BNTB is a versatile device capable of providing excellent performance in a number of applications. Approaches that ensure proper power handling are essential in order to guarantee the best possible results and performance in any application. The principles behind the MOSFETs working scheme need to be understood and adhered to in order to ensure efficient operation of the device.

The specific data is subject to PDF, and the above content is for reference

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