RS1E150GNTB Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-HSOP
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	3W (Ta), 22.9W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	590pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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RS1E150GNTB Application Field and Working Principle

RS1E150GNTB is a high-performance, single-gate lateral MOSFET with a Drain-Source Breakdown Voltage (VDSS) of 150V, a Drain-Source On-state Resistance (RDSon) of 0.1ohm, and an ultra-low gate charge (QG) of 0.33nC maximum at 10V. RS1E150GNTB is specifically designed to reduce static power loss in a variety of power switching applications. It is suitable in the automotive and mobile industry, where the combination of the extremely low gate charge and low drain-source on-state resistance reduces power loss and heat generation. This MOSFET is also suitable for a wide range of industrial, automotive and consumer electronics applications due to its superior operating and temperature range.

RS1E150GNTB Working Principle

The RS1E150GNTB single-gate lateral MOSFET consists of a semiconductor material - typically silicon - which is doped with tiny concentrations of impurities. These impurities, known as “dopants”, diffuse into the semiconductor and modify its electrical properties. For example, when phosphorus or boron are added to an otherwise pure silicon crystal, the semiconductor material becomes “n-type” and it acquires a negative charge. On the other hand, when arsenic or antimony are added to the silicon, it becomes “p-type” and takes on a positive charge.In the RS1E150GNTB, two distinct regions of the semiconductor material are placed adjacent to each other. These two regions are highly doped (“n-type” on one side, and “p-type” on the other side) and this forms a “junction” between them. The current flow in the RS1E150GNTB is controlled by the voltage applied across this junction (known as “gate voltage”). If the voltage is applied in one direction, the current will flow from the n-type to the p-type material. If, however, the voltage is applied in the other direction, the current will flow from the p-type to the n-type material. This process is known as “Drain-Source Current Flow” and is the basic principle behind the operation of all single-gate lateral MOSFETs.

RS1E150GNTB Applications

The RS1E150GNTB is a highly versatile and robust MOSFET with a wide range of applications including power switching, power conditioning and audio power amplifiers. Due to its low gate charge and low on-state resistance, the RS1E150GNTB is an ideal choice for applications where static power loss and heat generation must be reduced.In audio power amplifiers, the RS1E150GNTB can be used as a single-gate lateral MOSFET for pre-amplification, power switching and for power amplification. The low gate charge and low on-state resistance of the RS1E150GNTB helps to reduce static power loss, resulting in improved sound quality.In automobiles, the RS1E150GNTB MOSFET is used for power switching and power conditioning applications. Its low on-state resistance helps to reduce static power loss and heat generation, improving reliability and reducing cost of ownership.The RS1E150GNTB is also an ideal choice for use in industrial applications such as power factor correction, soft starters, UPS systems and renewable energy power controllers. Its low gate charge and low on-state resistance reduce static power loss and make it an ideal choice for demanding industrial applications.

Conclusion

The RS1E150GNTB is a high-performance, single-gate lateral MOSFET with a Drain-Source Breakdown Voltage of 150V, a Drain-Source On-state Resistance of 0.1ohm, and an ultra-low gate charge of 0.33nC maximum at 10V. Its low gate charge and low on-state resistance make it an ideal choice for reducing static power loss in power switching, audio power amplifiers, power conditioning for automotive and industrial applications, and for renewable energy power controllers.

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