RS1E320GNTB Discrete Semiconductor Products |
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| Allicdata Part #: | RS1E320GNTBTR-ND |
| Manufacturer Part#: |
RS1E320GNTB |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 30V 32A 8-HSOP |
| More Detail: | N-Channel 30V 32A (Ta) 3W (Ta), 34.6W (Tc) Surface... |
| DataSheet: | RS1E320GNTB Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.40000 |
| 10 +: | $ 0.38800 |
| 100 +: | $ 0.38000 |
| 1000 +: | $ 0.37200 |
| 10000 +: | $ 0.36000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-HSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 34.6W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2850pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 32A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The RS1E320GNTB transistor is a kind of high-power silicon insulated gate bipolar transistor (IGBT) that is widely utilized in various power applications. The transistor is one of the many transistors available from the renowned Renesas Electronics America company. It is often referred to as an IGBT because it uses a metal oxide semiconductor (MOS) field-effect technology to create robust and efficient current transferring capabilities. IGBT’s are the most efficient and popular transistors used in the semi-conductor industry.
The RS1E320GNTB is commonly used in motor control, power, and motor drive applications. Its field emission technology enables it to quickly and reliably switch large currents at high frequencies. This makes it ideal for use in power supplies, voltage switching, and other applications where high power and speed are needed. Additionally, the RS1E320GNTB can be used in power inverters and converters as well as motor controllers, air conditioning systems, and more.
The RS1E32GNTB also offers several unique benefits that are specific to this model. For instance, it features a low gate charge, making it ideal for use in high-speed applications. It also features a low on-state voltage drop, which helps reduce power loss during operation. Furthermore, the RS1E320GNTB is designed to operate at high efficiency, meaning that it can transfer more electrical energy with less draw on resources, making it a great choice for applications where energy efficiency is an important factor.
The RS1E320GNTB’s working principle is simple. When the gate voltage of the transistor is greater than the source voltage of the transistor, an electron current flows from the source to the drain. This current is known as a “source-drain” current. The size of the current depends on the IGBT’s gate voltage, and if the voltage drops, the current drops too. This is why the RS1E320GNTB is often used in motor control applications: because it can quickly and reliably switch between high and low power levels for improved efficiency.
As previously discussed, the RS1E320GNTB can be used in a variety of applications, from motor control to power conversion and more. In addition, this model is also well-suited for use in applications that require precise voltage and current control, such as in the case of electrostatic motors or light dimmers. Moreover, the RS1E320GNTB is highly compatible with most types of integrated circuits, making it a great choice for projects that require seamless integration with existing systems.
In conclusion, the RS1E320GNTB is a great choice for a wide range of power applications, from motor control to power conversion and even light dimmers. Its field emission technology allows it to quickly and reliably switch large currents at high frequencies, making it a great choice for applications where power and speed are important. Additionally, its low gate charge and low on-state voltage drop make it a great choice for applications that need to operate with increased efficiency. Lastly, its compatibility with most types of integrated circuits makes it a great choice for projects that require seamless integration with existing systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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RS1E320GNTB Datasheet/PDF