
Allicdata Part #: | RS1E200GNTBTR-ND |
Manufacturer Part#: |
RS1E200GNTB |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 20A 8-HSOP |
More Detail: | N-Channel 30V 20A (Ta) 3W (Ta), 25.1W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.19645 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-HSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 25.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RS1E200GNTB Application Field and Working Principle
As a type of field effect transistor, RS1E200GNTB transistors are widely used in various electrical and electronics applications. RS1E200GNTB is a single MOSFET that belongs to the FAMOS (field effect MOSFET) family. This type of transistor is available with a variety of voltage and power ratings, ranging from 4V to 800V, and 2.1W to 200W, for various applications.
Areas of Application
RS1E200GNTB transistors are commonly used in power management systems and power converters. They are also used in high-power switching applications, such as inverters and motor drives. They are suitable for both high frequency and low frequency applications, as they offer fast switching speed. In addition, they also find application in RF (radio frequency) and Microwave circuits, where they are used as amplifiers and oscillators.
In motor control applications, such as BLDC (brushless DC) motors, RS1E200GNTB transistors are often used. These transistors have the capability to control high voltage and high power loads. They are also used in automotive applications, where they are used for power supply in automobile systems, such as lighting, speed governors and engine controllers. In consumer electronics, RS1E200GNTB transistors are used in various consumer products, such as cellphones, TVs, washing machines and microwaves.
Working Principle and Description
RS1E200GNTB transistors are field effect transistors. This type of transistor consists of a semiconductor material, usually silicon or germanium, insulated by an oxide layer. The basic principle of operation is based on the fact that when an electric field is applied to the semiconductor material, its conductivity can be varied. In the case of an RS1E200GNTB transistor, when the electric field is applied to the gate of the device, the conductivity of the drain and source (D-S) electrodes is varied, creating a current path between the two electrodes. This current path is known as a “channel”, and it allows a current to pass from the source to the drain.
The RS1E200GNTB transistors have four pins: Gate, Source, Drain and Body (G-S-D-B). The source and the drain are connected to the source and drain of the gate insulator. The body is typically connected to the drain, and is also referred to as the bulk connection. When a positive voltage is applied to the gate, the transistor is “on”, and current flows from source to drain. Similarly, if a negative voltage is applied to the gate, the transistor is “off”, and no current flows through the device.
Advantages
RS1E200GNTB transistors offer several advantages. One of the main advantages is their high switching speed. This allows them to be used in high frequency and RF (radio frequency) circuits, where they can control extremely fast signals. In addition, these transistors can also be used in low frequency applications, which require lower switching speeds. Furthermore, they are also capable of controlling high voltage and high power loads, making them ideal for applications such as motor control and power converters.
They are also very reliable, offering a long lifetime and reduced risk of failure. Finally, RS1E200GNTB transistors are very easy to use. They require no special components or circuits for operation, and only require a few simple connections for installation.
Disadvantages
Despite their many advantages, there are some disadvantages associated with RS1E200GNTB transistors. For example, due to the high switching speeds, they tend to generate a lot of heat, and require specialized heat sinks and other cooling solutions. In addition, they are not suitable for low frequency applications, as they may not be able to provide the necessary frequency response. Finally, they tend to be more expensive than other types of transistors.
Overall, the RS1E200GNTB transistors are a popular choice for power management systems and power converters, as they offer high switching speed and reliability, as well as low cost. Thanks to their versatility, they can be used in a wide range of applications, from high frequency to low frequency, and from industrial to consumer products.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
RS1E200GNTB | ROHM Semicon... | 0.22 $ | 1000 | MOSFET N-CH 30V 20A 8-HSO... |
RS1E180BNTB | ROHM Semicon... | 0.15 $ | 1000 | MOSFET N-CHANNEL 30V 60A ... |
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