RSS100N03FRATB Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	13.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1070pF @ 10V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

RSS100N03FRATB is a vertical N-Channel MOSFET. It is a single device, with utmost drain current of up to 100A at 25°C and 175°C CaseTemperature. This single MOSFET offers a good degree of electrical isolation with extremely low on-resistance and low gate charge, making it an ideal choice for power supply and other high-current power conversion applications.Applications

The RSS100N03FRATB MOSFET is suitable for high current applications in many different industries, such as automotive, telecommunication, computer, consumer electronics, industrial and military applications. Examples include power management, power switches, high-side switches, level shifters, flyback converters and high current circuit applications.The device is especially suitable for high-frequency switching applications because of its low on resistance of its short conduction and fast switching characteristics, as well as its high volume full monolithic structure. This allows for a superior power to footprint than competing solutions.Operation/Working Principle

The RSS100N03FRATB MOSFET is an n-channel device designed to operate as an open drain switch. The input terminal is the gate while the output terminal is the drain. A positive voltage applied to the gate establishes a conductive path between the source and drain; otherwise, when no voltage is applied to the gate, the path is broken and the device is off.The function of the MOSFET is determined by its unique characteristics such as on resistance, gate charge and threshold voltage. When a voltage is applied to the gate, the insulated gate may be pulled down and an inversion layer of electrons forms beneath the gate. The inversion layer acts as a conductive barrier between the source and drain to form a conductive path. This action is controlled by the on resistance and gate charge of the MOSFET. The gate charge is the amount of charge needed to raise or lower the gate voltage to the threshold voltage, which determines when the MOSFET is on or off.The threshold voltage is the voltage at which the gate voltage starts to see change. When this voltage is exceeded a tiny inversion region forms between the source and drain, reversing the flow of current and turning the MOSFET on. The MOSFETs used in power supplies and electronic circuits are most often used as switches to control the flow of current. The higher the current or voltage you want to switch, the bigger the MOSFET to handle the heavy currents.Conclusion

RSS100N03FRATB is a vertical N-Channel MOSFET suitable for high current applications. It is an ideal choice for power supply and other high-current power conversion applications due to its extremely low on-resistance and low gate charge. The device is designed to operate as an open drain switch, with on resistance and gate charge determining when the MOSFET is on or off. The MOSFET is suitable for many applications in automotive, telecommunication, computer, consumer electronics, industrial and military applications, making it a versatile single device for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description