RSS140N03TB

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Rds On (Max) @ Id, Vgs:	6.7 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 5V
Vgs (Max):	20V
Input Capacitance (Ciss) (Max) @ Vds:	3150pF @ 10V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RSS140N03TB Application Field and Working PrincipleThe RSS140N03TB is a full flow, logic level enhancement mode Field Effect Transistor (FET) which is manufactured by Jiangsu Changjiang Electronics Technology Co., Ltd. The FET is a voltage controlled device which can act as a switch to control the flow of a current between two terminals when activated, either partially or fully. This particular product is based upon a planar n-channel process and thus has a low gate threshold voltage. With a usually 18V drain-source breakdown voltage and a continuous current of 10A and pulsed current of 14A, the usage of the RSS140N03TB is focused mainly on load switches, DC-DC converters, and DCMC controls.Working PrincipleField effect transistors work through the principle of the MOSFET, which is the Metal-Oxide Semiconductor Field-Effect Transistor. These transistors are simply switches - when current is passed to the gate of the transistor, it allows a larger current to flow between the source and the drain terminals. The current between the gate and source is called "gate current" or "drive current", and is the key factor in how the transistor functions. The greater the gate current, the higher the voltage between the drain and source. The voltage between the gate and source is the "gate voltage", and this acts as a threshold what will determine if the transistor will conduct current or not - if the gate voltage is high enough, then the device will be "on", when the voltage is below the threshold, it will be "off". An advantage of the MOSFET is the low gate voltage required for its operation, allowing for high-speed switching which is suitable for high frequency applications.The RSS140N03TB is an enhancement-mode FET, meaning it will be ‘on’ when the gate voltage is higher than the source. This FET is specifically a p-channel type, meaning that the majority-carrying carriers are holes as opposed to electrons in n-channel types. Offering a total gate charge of only 19 nC and a turn-on time of just 18 ns, this device is a popular choice when it comes to speed and low charge-capacitance. ApplicationsThe RSS140N03TB is suitable for many applications, notably those involving load switches, DC-DC converters and DCMC controls. It can also be used in adapter and charger circuits, as it has a high conductivity rate. Additionally, its small size and low gate threshold voltage make it a good choice for laptop computer power supplies. As a logic-level device, it can be easily used in high speed logic circuits to control the amount of current which is passed to the load. This makes it suitable for switching circuits, or protection circuits. In applications such as DC control systems, this FET can be used as a driver for power switching devices such as MOSFETs or IGBTs.Efficiency plays a key role in the modern day, and this RJ3140N03TB offers excellent power savings as it can handle high current with low gate drive voltage. It also supports short circuit protection and over-temperature protection, making it a great choice for any device which needs to remain as energy efficient as possible.In addition, the RSS140N03TB is also used in many power converters and embedded drivers and controllers, thanks to its high level of reliability and its load switching capabilities.ConclusionThe RSS140N03TB is a highly reliable and efficient FET ideal for applications where short circuit protection, over-temperature protection, high power efficiency and gate drive voltage are important considerations. Its low gate charge, turn-on time and threshold voltage make it one of the most cost-efficient and reliable FETs currently on the market. Suitable for up to 10A continuous current and 14A pulsed current without fail, the RSS140N03TB is a great choice for multiple different applications, such as DC-DC converters, load switches, adapters, chargers, and power converters.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description