| Allicdata Part #: | RSS125N03TBTR-ND |
| Manufacturer Part#: |
RSS125N03TB |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 30V 12.5A 8-SOIC |
| More Detail: | N-Channel 30V 12.5A (Ta) 2W (Ta) Surface Mount 8-S... |
| DataSheet: |  RSS125N03TB Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 5V |
| Vgs (Max): | 20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1670pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2W (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOP |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RSS125N03TB is a power MOSFET developed specially for industrial, commercial and automotive applications. It is a highly reliable device that offers high power density, excellent ruggedness, and excellent dynamic performance versus temperature and gate-source bias. This optimized, highly dense MOSFET provides significant improvements in dynamic and thermal performance over competing products, making it an excellent choice for power MOSFETs.
Application Field
RSS125N03TB is suitable for a wide range of industrial and commercial applications. Specifically, it provides highly reliable power control and switching for high-current switching applications in motor control, systems control, video switching, and other applications where high efficiency, long life, and mechanical reliability are required. The device can be used in mobile communication, base station converters, motor controllers, and battery packs for automotive, consumer and industrial applications.
Working Principle
RSS125N03HB is a four-terminal semiconductor device that uses an internal gate structure to control the flow of current. The channel of the MOSFET is made of two heavily doped regions of the same type separated by a thin oxide layer. The gate terminal of the MOSFET holds a reverse bias voltage, which will determine how much current the device can switch. When the drain-source voltage applied between the two other terminals is increased, the device will be turned on and current will flow through the channel. When the gate voltage is increased, the source-drain current can increase. The result is a highly efficient power MOSFET with excellent performance in terms of both switching speed and power dissipation.
The RSS125N03TB is unique in that it uses a depletion mode enhancement MOSFET process. This allows for the gate to be biased in positive voltage for higher efficiency operation, lower voltage turn-on, bootstrap drive capability, and very low on-state resistance.
In summary, the RSS125N03TB is an excellent device for high-current switching, motor control, and other commercial applications. It provides robustness, low power dissipation, and excellent dynamic performance over temperature and gate-source bias – all at a competitive price.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "RSS1" Included word is 24
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RSS1E220MCN1GS | Nichicon | 0.25 $ | 3000 | CAP ALUM POLY 22UF 20% 25... |
| RSS1E680MCN1GS | Nichicon | 0.35 $ | 1000 | CAP ALUM POLY 68UF 20% 25... |
| RSS1C101MCN1GS | Nichicon | 0.2 $ | 6000 | CAP ALUM POLY 100UF 20% 1... |
| RSS110N03FU6TB | ROHM Semicon... | 0.51 $ | 1000 | MOSFET N-CH 30V 11A 8SOIC... |
| RSS100N03TB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
| RSS105N03TB | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 30V 10.5A 8-S... |
| RSS110N03TB | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A 8-SOI... |
| RSS120N03TB | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A 8-SOI... |
| RSS125N03TB | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
| RSS140N03TB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 14A 8-SOI... |
| RSS105N03FU6TB | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 30V 10.5A 8SO... |
| RSS120N03FU6TB | ROHM Semicon... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A 8SOIC... |
| RSS100N03FRATB | ROHM Semicon... | 0.27 $ | 1000 | 4V DRIVE NCH MOSFET (CORR... |
| RSS1E270MCN1GS | Nichicon | 0.21 $ | 1000 | CAP ALUM POLY 27UF 20% 25... |
| RSS100N03FU6TB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 10A 8SOIC... |
| RSS1E100MCN1GS | Nichicon | 0.21 $ | 1000 | CAP ALUM POLY 10UF 20% 25... |
| RSS1E470MCN1GS | Nichicon | 0.24 $ | 1000 | CAP ALUM POLY 47UF 20% 25... |
| RSS1V100MCN1GS | Nichicon | 0.29 $ | 1000 | CAP ALUM POLY 10UF 20% 35... |
| RSS1E560MCN1GS | Nichicon | 0.31 $ | 1000 | CAP ALUM POLY 56UF 20% 25... |
| RSS1W3K6JTB | TE Connectiv... | 0.02 $ | 1000 | RES 3.6K OHM 1W 5% AXIAL3... |
| RSS1W1K8JTB | TE Connectiv... | 0.02 $ | 1000 | RES 1.8K OHM 1W 5% AXIAL1... |
| RSS1W56RJTB | TE Connectiv... | 0.02 $ | 1000 | RES 56.0 OHM 1W 5% AXIAL5... |
| RSS130N03FU6TB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 13A 8SOIC... |
| RSS125N03FU6TB | ROHM Semicon... | -- | 1000 | MOSFET N-CH 30V 12.5A 8SO... |
Latest Products
IRFL31N20D
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
IXTT440N055T2
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
IXTH14N80
MOSFET N-CH 800V 14A TO-247N-Channel 800...
IXFT23N60Q
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
IXTT72N20
MOSFET N-CH 200V 72A TO-268N-Channel 200...
IXFT9N80Q
MOSFET N-CH 800V 9A TO-268N-Channel 800V...