RSS100N03TB Discrete Semiconductor Products

The RSS100N03TB FET is a semiconductor with a metal–oxide–semiconductor field-effect transistor (MOSFET) structure. This MOSFET offers improved performance and quality over conventional insulated gate bipolar transistors (IGBTs). The device integrates multiple functions together and offers a wide range of applications from low-voltage to high-voltage. This article provides an overview of the various application fields and the working principle of the RSS100N03TB.

Introduction

The RSS100N03TB is an insulated gate MOSFET device with a low-side integrated driver. It is manufactured by Infineon Technologies and is part of its Advanced MOSFET (AMOS) product family. It is a 100V N-channel MOSFET integrated with an integrated driver for better EMI performance, lower conduction and switching losses, and improved short-circuit behavior. The device features a robust avalanche energy rated at 45mJ.

Features

The RSS100N03TB offers several features which make it a suitable choice for a wide range of applications. These features include its low-profile package, low on-resistance (RL=2.2Ω), low input capacitance (CO=15V), high peak current (IPM=150A), a wide operating temperature range (-40°C to +175°C), and its ESD robustness. In addition, its integrated driver feature provides improved EMI performance and reduced switching losses.

Application Fields

The RSS100N03TB is suitable for a wide range of applications from low-voltage to high-voltage. These application fields include automotive electronics, lighting systems, power converters, industrial motor drives, wall-air conditioners, solar inverters, home appliances, and more. Specifically, the device is suitable for applications such as voltage regulation, motor speed control, switching power supplies, DC power supplies, AC power supplies, and resonant switching.

Working Principle

The RSS100N03TB MOSFET leverages the insulated gate field-effect transistor (IGFET) structure. This type of transistor is composed of four semiconductor regions: the source, the drain, the gate, and the substrate. These four regions are surrounded by an insulating layer, which is known as the gate oxide. The gate oxide serves as a barrier between the gate and the substrate and is used to control the amount of current flowing between source and drain. This can be done by varying the voltage varying the voltage applied to the gate.

When a sufficient voltage is applied to the gate, it will cause an electric field to be generated, which in turn will cause the carriers in the channel adjacent to the gate oxide to be drawn towards the gate oxide and increase the channel conductance. This will allow more current to flow between the source and the drain. Similarly, when the voltage applied to the gate is decreased, the carriers in the channel adjacent to the gate oxide will be repelled back to the substrate and the channel will be deformed. This will reduce the channel conductance and the current flowing between source and drain will be decreased.

Conclusion

The RSS100N03TB insulated gate MOSFET is a semiconductor device with a wide range of application fields and excellent performance characteristics. Its integrated driver and low on-resistance makes it ideal for low-voltage to high-voltage applications. It leverages the insulated gate field-effect transistor (IGFET) structure, in which a voltage applied to the gate can control the amount of current flowing between source and drain, thereby providing the necessary functionality.