Allicdata Part #: | RSS125N03FU6TB-ND |
Manufacturer Part#: |
RSS125N03FU6TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 12.5A 8SOIC |
More Detail: | N-Channel 30V 12.5A (Ta) 2W (Ta) Surface Mount 8-S... |
DataSheet: | RSS125N03FU6TB Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 5V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1670pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RSS125N03FU6TB is a single N-channel MOSFET used primarily for power applications. It has a maximum drain current of 5A and a drain-source voltage rating of 60V. It is often used in high voltage, power switching, and high-current applications. The MOSFET has very low resistance and a fast switching time, making it ideal for high current, power switching applications.
MOSFETs like the RSS125N03FU6TB employ a principle referred to as “bulk conduction.” Bulk conduction occurs when an electric current is passed through a material which has its molecules arranged in a three-dimensional lattice. Such lattices can resist current flow in two dimensions, but allow it in the third. As a result, current can flow through the lattice without being impeded by itsconstituent molecules. This makes MOSFETs extremely efficient for power switching applications.
The RSS125N03FU6TB is also very attractive in terms of gate turn-on and turn-off times. It has a very fast response time due to its very low input capacitance, low on-state resistance, and low gate charge. This gives it excellent switching performance and makes it suitable for high-speed power applications. The MOSFET is capable of switching up to 5A, giving it more than enough current performance for most applications.
In addition to its high-speed switching performance, the RSS125N03FU6TB also has an excellent package size. Its footprint is very small compared to other MOSFETs, which makes it ideal for when board space is limited. This means that the device can be used in applications that would otherwise be restricted by size constraints.
The RSS125N03FU6TB is part of a family of MOSFETs by Fairchild Semiconductor. It has many other variants, such as the RSS125N03FU6T4, which has a 4A drain current rating and a 55V drain-source voltage rating. The MOSFET family also includes devices with maximum drain currents of 6A, 10A, and 15A. These devices are suitable for even higher current and power switching applications.
With its excellent performance, small package size, and broad range of available devices, the RSS125N03FU6TB MOSFET is ideal for a variety of power switching applications. Its low input capacitance, low on-state resistance, and fast switching times make it a very attractive and efficient option for any power application.
The specific data is subject to PDF, and the above content is for reference
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