RSS130N03FU6TB

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The RSS130N03FU6TB is a transistor package device particularly designed for low threshold voltage. It is part of the Field Effect Transistor (FET) family of transistors, and is commonly called a Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). It is a single, p-channel FET (SFET) and is one of the most commonly used FET types due to their numerous advantages, such as wide voltage range with low operating currents, low resistance, simple biasing, and low noise characteristics.

This specific RSS130N03FU6TB device is particularly designed for low sources/drain voltages and has a maximum drain current of 130 milliamperes. It is a low gate charge device and also has low input capacitance, allowing for great resistance to EMI (electromagnetic interference). Its maximum Drain-Source breakdown voltage is 30 volts and its forward transconductance is equal to 11.5 millisiemens. Additionally, this MOSFET has a superlow threshold voltage of 0.6 volts maximum.

The RSS130N03FU6TB MOSFET has a variety of uses in the commercial, industrial and military sectors. Its low voltage characteristics make it particularly suitable for applications in automotive systems, along with industrial control systems, digital circuits and AC systems. This transistor can also be used in low frequency switching, power management, communication circuits and high frequency RF (radio frequency) devices. Moreover, its low threshold voltage reduces the power loss and improves the efficiency of the design.

The working principle of this MOSFET is based on the flow of electrons between the source and the drain. It has two regions, called the channel and the gate. The gate receives a negative charge, which in turn creates a negative electric field in the closed channel between the two. This electric field causes a decrease in the number of electrons that can flow in the channel. When a voltage is applied to the gate, the electrons move and cause a large number of electrons to be drawn in the channel. This small variation of current between the source and the drain is the driving force that controls the amount of drain current.

In summary, the RSS130N03FU6TB is a single p-channel MOSFET, designed to have low threshold voltages. It has a maximum drain current of 130mA and a maximum Drain-Source breakdown voltage of 30 volts. The various features of this device make it a suitable choice for multiple applications such as automotive, digital, communication and AC systems. The working principle of this MOSFET is based on the electric field created by a voltage applied to the gate, which in turn controls the amount of drain current.

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