RSS110N03TB Discrete Semiconductor Products |
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Allicdata Part #: | RSS110N03TBTR-ND |
Manufacturer Part#: |
RSS110N03TB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 11A 8-SOIC |
More Detail: | N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | RSS110N03TB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 10.7 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The RSS110N03TB is a type of single, N-channel MOSFET transistor designed for use in applications requiring significant amounts of current flow, such as battery-operated circuits, electronic motor control, and motor speed control. This transistor has an improved resistance versus temperature characteristic and better high-frequency operation due to its enhanced high-voltage and current handling capabilities, making it suitable for a wide range of applications.
A MOSFET, or Metal-Oxide-Semiconductor Field-Effect-Transistor, is a type of transistor designed to control the flow of electrical current in integrated circuits. Unlike conventional BJT (Bipolar Junction Transistors), MOSFETs have no need for a base current to control the current flow. Instead, the voltage applied to the gate of the device is used to control the flow of current in the channel between the source and the drain.
The RSS110N03TB transistor is an N-Channel MOSFET device and operates on a principle of majority carrier conduction. The majority carriers on the N-Channel allow for a relatively large voltage between the source and the drain, with a much lower drain-source resistance. This enables the transistor to handle a large amount of current with a relatively low voltage at the source and drain.
The RSS110N03TB has an improved operation over a wide range of temperatures and has a robustness against breakdown due to its low gate drive requirement and gate charge. This makes the RSS110N03TB a suitable choice for applications requiring high switching speeds as well as those that require high power switching.
This MOSFET is capable of handling a maximum drain-source voltage of 110 volts and a maximum drain current of 30 amps. It has a low gate threshold voltage and low device capacitance. Additionally, its maximum transconductance of 6.1 mS and low on-resistance of 4.65 ohms, make the RSS110N03TB an excellent choice for a wide range of motor control applications.
The addition of a reverse biased diode connected between the drain and the source of the MOSFET greatly increases its robustness in applications where transients occur. Another valuable feature of the RSS110N03TB transistor is its fast switching speed, which is typically only a few nanoseconds.
The RSS110N03TB has a wide range of possible applications, including motor control, switch mode power supplies, and more. Its highly efficient operation and wide range of features make it an ideal choice for applications that require a reliable, robust power switch.
The RSS110N03TB transistor is a great choice for a wide range of applications that require a reliable power switch. Its high current handling capabilities, fast switching speed, and excellent resistance versus temperature characteristics make it a top choice for many types of circuits. This transistor provides maximum efficiency, ensuring that your circuits run at their best.
The specific data is subject to PDF, and the above content is for reference
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