Allicdata Part #: | RSS110N03FU6TB-ND |
Manufacturer Part#: |
RSS110N03FU6TB |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 11A 8SOIC |
More Detail: | N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount 8-SOP |
DataSheet: | RSS110N03FU6TB Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.46759 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 10.7 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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Introduction to RSS110N03FU6TB: RSS110N03FU6TB is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor), a type of transistor that acts as an electronically controlled switch. It is capable of switching relatively low and high-power electrical signals. The RSS110N03FU6TB has a maximum Drain-Source Voltage (VDS) of 60V, a maximum Drain-Source Current (ID) of 20A, and a maximum Drain-Source On-Resistance (RDS) of 0.0067Ω. The RSS110N03FU6TB is packaged in a TO-220AB package, which is a common choice for high-power applications.
Application Fields: The RSS110N03FU6TB has a wide range of potential applications, such as power regulators and supplies, solid-state relays, motor control, and home appliance controls. Depending on the application, the RSS110N03FU6TB can be used for either power electronics or signal processing.
Signal Processing Applications: When used for signal processing applications, the RSS110N03FU6TB is ideal for dealing with AC or DC signals, including audio signals. It can be used in order to process signals at various frequencies and amplitudes, and with various kinds of distortion and noise. This makes the RSS110N03FU6TB an ideal component for a number of audio applications, such as amplifiers, sound systems, and recording devices. Additionally, the RSS110N03FU6TB can be used for high-frequency signal amplification and switching. For example, it can be used in phase-shift keying (PSK) or frequency-shift keying (FSK) modulation systems.
Power Electronics Applications: When used for power electronics applications, the RSS110N03FU6TB is ideal for controlling and managing high-power, high-voltage signals. It can also be used for dealing with power signals at various frequencies and amplitudes, and with various kinds of distortion and noise. This makes the RSS110N03FU6TB an ideal component for a number of power electronics applications, such as motor control, DC-to-DC converters, and switch-mode power supplies. The RSS110N03FU6TB is particularly useful for applications where high power, low on-resistance, and low switching losses are required.
Working Principle: The RSS110N03FU6TB is a metal-oxide semiconductor field-effect transistor (MOSFET). MOSFETs are voltage-controlled devices that can be used for switching or amplifying electrical signals. The main components of a MOSFET are the source, drain, and gate. The source and drain are two terminals, through which current flows. The gate is a terminal that is used to control the amount of current that flows between the source and drain.
In order to understand the working principle of the RSS110N03FU6TB, it is important to first understand the basics of the MOSFET. The MOSFET is a voltage-controlled device, meaning that the amount of current that flows between the source and drain is determined by the voltage applied to the gate. When a positive voltage is applied to the gate, a MOSFET will turn on (i.e., increase its conduction); when a negative voltage is applied to the gate, a MOSFET will turn off (i.e., decrease its conduction). The amount of current that flows between the source and drain is determined by the voltage applied to the gate. The higher the gate voltage, the higher the current will be.
The RSS110N03FU6TB is a single MOSFET, meaning it has only one gate terminal. This allows the device to be switched on or off in a simple, efficient manner. As the voltage applied to the gate increases, the transistor will become more conductive, allowing more current to flow between the source and drain. Conversely, as the voltage applied to the gate decreases, the transistor will become less conductive, allowing less current to flow between the source and drain. This allows the RSS110N03FU6TB to be used as an electronically controlled switch, allowing it to switch relatively low and high-power electrical signals.
Conclusion: The RSS110N03FU6TB is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor), a type of transistor that acts as an electronically controlled switch. It is capable of switching both low and high-power electrical signals. The RSS110N03FU6TB has a wide range of application fields, such as power regulators and supplies, solid-state relays, motor control, and home appliance controls. The RSS110N03FU6TB works on the principle that the amount of current that flows between the source and drain is determined by the voltage applied to the gate. With its high maximum drain-source voltage, maximum drain-source current, and low maximum drain-source on-resistance, the RSS110N03FU6TB is an ideal choice for a number of power electronics and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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