S29GL01GP11FAIR20

Series:	GL-P
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	110ns
Access Time:	110ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA
Supplier Device Package:	64-Fortified BGA (13x11)

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S29GL01GP11FAIR20 Memory

S29GL01GP11FAIR20 is a type of non-volatile, read-only memory (NVM) from Spansion that has become increasingly popular in industrial applications. This memory technology is capable of storing more than one million binary numbers in its flash cells, with no need for an external power supply. It also features fast access times and wide adjustability with the ability to adjust the number of bits for each data point being stored. It is also known for its high degree of reliability, as it is able to withstand extreme temperatures and can operate in several industrial-specific environments. As such, S29GL01GP11FAIR20 has become a popular choice for many industrial applications.

Application fields

The versatility of S29GL01GP11FAIR20 makes it applicable in a variety of applications across many industries, such as:

• Mobile and automotive electronics
• Networking and telecommunications systems
• Biomedical system
• Military and aerospace
• Consumer electronics
• Industrial control systems
• Satellite communication

Within these applications, S29GL01GP11FAIR20 is used in a variety of ways. For example, in mobile and automotive electronics it is used for onboard storage of programs and parameters, data logging, and program execution. In networking and telecommunications, S29GL01GP11FAIR20 is used to store application software and parameter data for modems and networking peripherals. In biomedical systems, S29GL01GP11FAIR20 is used for on-chip sampling, data acquisition, and data logging.

Working principle

The working principle of S29GL01GP11FAIR20 is based on the engineering principle of flash memory technology. This technology relies on the idea of storing electrical charge “cells” on a silicon chip. These cells, known as threshold switches, are used to store binary numbers in either a 0 or 1 when a voltage is applied. The amount of voltage determines which state the cell is in – either 0 or 1. This technology allows for the storage of a large amount of data, in a small space, that can be retrieved quickly and reliably with no external power source.S29GL01GP11FAIR20 features an adjustable storage capacity ranging from 1 to 128 Mbits of data. Every individual bit is stored in flash cells, and the number of bits that can be stored in any single cell can be determined via the use of an adjustable address register. This register determines the address of the cell where the data should be stored, and the amount of data that can be stored in a particular cell.The S29GL01GP11FAIR20 also features several features to ensure reliability and data accuracy. These features include wear leveling, which helps to ensure that no single cell is used too frequently, reducing the risk of damage; a power management system, allowing cells to be in a low-power state when not in use; error-correction code, which flags any errors that arise when writing data; and error detection, that helps to identify any errors in the stored data.

Conclusion

S29GL01GP11FAIR20 is a versatile and reliable NVM with the capability to store data in flash cells. This technology is suitable for use in a variety of different industrial applications and has become increasingly popular in recent years. Its adjustable storage capacity, fast access times, and wide adjustability makes it an ideal choice for many applications. With its reliable performance, S29GL01GP11FAIR20 is a favored choice for industrial memory applications.

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