S29GL01GP11FFIR10

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The S29GL01GP11FFIR10 is a flash memory module from Samsung Memory Semiconductor Division. It is a 1 Gigabyte (GB) NOR flash memory device that is designed for a wide range of consumer and industrial applications. It is commonly used for systems that require longterm, reliable storage.

The S29GL01GP11FFIR10 incorporates advanced SLC Parallel technology for fast erase and write times. It is a fully managed NOR Flash memory, with an 8 bit data width, and offers read, program, and erase (RPE) operations. It also has an advanced error correction code (ECC) feature, which allows users to detect and correct errors in stored data.

The application field of the S29GL01GP11FFIR10 includes consumer electronics, data storage systems, automotive, embedded systems, and industrial applications. In consumer electronics, the device can be used in devices such as smartphones, digital cameras, and MP3 players to store music, photos, and other data. In data storage systems, the device can be used in mission-critical storage systems such as data centers and enterprise storage systems, where reliability and performance are key. For automotive applications, the device can be used in on-board computers and GPS systems. In embedded systems, the device can be used in various embedded systems design such as industrial automation and consumer appliances. Finally, in industrial applications, the device can be used for long-term data logging applications.

The working principle of the S29GL01GP11FFIR10 is based on the standard SLC Parallel technology. This technology consists of two voltage levels (or “bits”) that represent the bits of data. In NOR flash memory, the bits are divided into separate flash memory cells. When data is written to these cells, the voltage level of each cell is changed, representing a digital “1” or “0” bit. Similarly, when data is read, the voltage level of each cell is checked to determine its value.

This S29GL01GP11FFIR10 device is a managed NOR Flash memory which includes advanced features such as ECC, wear-leveling, and address translation. ECC provides error detection and correction, which helps to ensure data integrity and reliability. Wear-leveling ensures optimal performance and reliability throughout the life of the device by evenly distributing the data written to block and erase cycles. Finally, address translation allows for the logical mapping of data to physical memory address locations.

The S29GL01GP11FFIR10 is a high-performance, managed NOR Flash memory device offering reliable and long-term storage capabilities. Its advanced features such as error correction code, wear-leveling, and address translation make it ideal for mission-critical storage applications in consumer electronics, automotive, data storage systems, embedded systems, and industrial applications.

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