Allicdata Part #: | S29GL01GP11TAIR10-ND |
Manufacturer Part#: |
S29GL01GP11TAIR10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 110... |
DataSheet: | S29GL01GP11TAIR10 Datasheet/PDF |
Quantity: | 1000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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The S29GL01GP11TAIR10 (hereafter referred to as S29GL01GP11TAIR10) is a type of nonvolatile dual in-line memory module (NVDIMM) that is designed to provide fast persistent storage for a wide range of applications. In this article, we will discuss the application field and working principle of S29GL01GP11TAIR10.
Application Field of S29GL01GP11TAIR10
The S29GL01GP11TAIR10 is designed to be used in data-intensive applications such as servers, storage area networks (SANs), and embedded systems. It provides high-speed, nonvolatile storage, with fast read and write speeds, low latency, and a large capacity for storing large amounts of data. The S29GL01GP11TAIR10 also provides persistent data with battery-backed RAM, allowing for uninterrupted operation in the event of a power failure. This makes it ideal for applications where data must be maintained even in the event of a power interruption.
The S29GL01GP11TAIR10 is also well-suited for data-intensive applications that require a high level of data protection. Its write-protection capabilities ensure that data is not overwritten or manipulated, making it ideal for applications that require data integrity and security. Additionally, the S29GL01GP11TAIR10 provides advanced error correction, allowing data errors to be corrected without data loss or corruption, increasing reliability and decreasing downtime.
Working Principle of S29GL01GP11TAIR10
The S29GL01GP11TAIR10 is a nonvolatile dual in-line memory module. It operates using a combination of Flash memory, NVDIMMs, and battery-backed RAM. The battery-backed RAM provides power-fail protection, allowing data to be retained in the event of a power interruption. The NVDIMMs, or Non-Volatile Dual In-line Memory Modules, are fast, nonvolatile memory modules that allow for quick read and write speeds, low latency, and large capacity.
The S29GL01GP11TAIR10 also features advanced error correction, allowing for data errors to be corrected without data loss or corruption. It provides data protection and integrity by allowing for write protection, preventing data from being modified or corrupted. The S29GL01GP11TAIR10 also uses an advanced segmented memory architecture to provide secure data storage and access.
Overall, the S29GL01GP11TAIR10 is a powerful, reliable, and secure NVDIMM offering excellent performance and data protection for data-intensive applications. With advanced error correction, write protection, and a segmented memory architecture, the S29GL01GP11TAIR10 is an excellent choice for applications that require high speed, reliability and data integrity.
The specific data is subject to PDF, and the above content is for reference
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