S29GL01GP11TFCR10

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S29GL01GP11TFCR10 is a type of NOR flash memory device produced by Cypress (formerly Spansion). It is a 8-Gigabit RAM device packaged in a Ball Grid Array (BGA) package with an operating voltage of 1.8V. It is ideal for the design of embedded applications requiring high density non-volatile memory.

The S29GL01GP11TFCR10 has a number of features that make it attractive for use in embedded applications. It has a maximum read speed of four megabytes per second and a maximum write speed of three megabytes per second. It is available in a number of density options ranging from 128 Mbit to 8 Gbit. It also has a durable static design that ensures data integrity over the life of the device.

The functionality of the S29GL01GP11TFCR10 is provided by a variety of techniques. It uses advanced multilayer cell (MLC) technology, allowing for up to 4.5 times the number of bits per cell compared to single layer cell (SLC) technology. It also has an active program and erase (AP/EP) feature, allowing for faster programming and erasing.Finally, it has an error correction code (ECC) system, allowing it to detect and correct errors during write operations.

The primary application field of the S29GL01GP11TFCR10 is embedded systems. It is typically found in consumer electronics, such as digital cameras and PDAs, and in automotive, industrial, and medical applications. Its small size and low-power consumption makes it well suited for applications where space and energy efficiency are important.

The working principle of the S29GL01GP11TFCR10 is based on the same Flash memory technology used in other NOR Flash devices. NOR Flash memory is a type of non-volatile memory which stores data on a series of memory cells. Data is stored in these cells in the form of electrons which are trapped within the memory cell oxide layer. When accessed, these electrons are moved from the oxide layer to a floating gate, which signals a “1” or “0” depending on their charge. This information can then be read from the memory cell into main memory.

To erase and rewrite a memory cell, the chip applies a high voltage to the gate of the memory cell, which causes the stored electrons to be released from the gate. This allows the stored data to be overwritten with new data. The entire process of erasing and writing to a memory cell is done under the control of an internal erase/write controller.

The S29GL01GP11TFCR10 is built on Cypress’ 90nm process that provides an optimized balance of performance, density, power and endurance. It is also compliant with the JEDEC and MoSys standards, making it easy to integrate into existing systems. It is capable of operating over a wide temperature range of -65°C to 85°C and its small size makes it an ideal solution for embedded applications.

The S29GL01GP11TFCR10 is a powerful memory device that is well suited for embedded applications. Its advanced features and low-power consumption make it an attractive solution for a wide range of applications. From consumer electronics to automotive and industrial applications, the S29GL01GP11TFCR10 provides reliable data storage and retrieval for embedded systems.

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