Allicdata Part #: | S29GL01GP11TFCR20D-ND |
Manufacturer Part#: |
S29GL01GP11TFCR20D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 110... |
DataSheet: | S29GL01GP11TFCR20D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The S29GL01GP11TFCR20D is a flash memory device that provides a reliable storage solution for a variety of applications. It is a small, low-cost memory device that offers fast read and write times and high-density storage. The S29GL01GP11TFCR20D is a single supplies Vcc, ambient temperature, and wide temperature range day products. It offers byte-level, sector-level, and block-level erase/program capability.
The S29GL01GP11TFCR20D is a nonvolatile memory device that stores its data even after an unexpected power loss. When power is restored, the data is still stored correctly and can be retrieved from the device. This makes it an ideal choice for applications that require data to be stored reliably even in the case of a power loss.
The S29GL01GP11TFCR20D is popular in rugged computing applications, as well as automotive, industrial, and aerospace applications. Many of these applications require reliable data storage even in harsh environments and the S29GL01GP11TFCR20D can easily handle temperature changes and vibration without affecting its performance.
The S29GL01GP11TFCR20D can also be used in embedded systems. Due to its small size and low power usage, it is ideal for applications where size and power efficiency are critical factors. The S29GL01GP11TFCR20D provides a reliable storage solution in restricted embedded system form factors and with limited energy availability.
The S29GL01GP11TFCR20D is based on a floating gate technology. This technology allows for cell programming and erasure, making it suitable for code storage in nonvolatile applications. A single cell is made up of two transistors, a source, a drain and a control gate, with a floating gate embedded between them. To program a cell, a voltage breakdown at the floating gate is created. To erase the cell, the voltage level of the floating gate needs to be restored to its original state. The S29GL01GP11TFCR20D offers byte, sector, and block erase and program capabilities.
The S29GL01GP11TFCR20D also provides high endurance. This device can withstand up to 10,000 program/erase cycles before it shows signs of fatigue. This is an important feature for any embedded system, as it ensures the device can still be used after many years of use.
The S29GL01GP11TFCR20D is a reliable and efficient storage solution for a variety of applications. It offers robust operation at a very affordable price and is suitable for use in a wide range of applications, from rugged computing to embedded systems. Its byte, sector, and block erase and program capabilities make it an attractive option for many applications. The high endurance of this device ensures that it can be used for many years in mission critical applications. All these features make the S29GL01GP11TFCR20D a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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