S29GL01GP11TFIR10

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Introduction

The S29GL01GP11TFIR10 is a 64 megabit (Mb) CMOS Smart-Storage Flash device that combines a separate program/erase controller (PE) with a 16M×4bits CMOS Floating Gate Array for highly reliable, low cost and low power nonvolatile memory (NVM) applications.

Application Field

The S29GL01GP11TFIR10 are well suited for automotive, consumer, industrial, storage and workstation applications that require fast read access times and additional protection from accidental write/erase operations.

The S29GL01GP11TFIR10 are ideally suited for applications such as oscilloscope data capture and automatic performance optimization, as well as applications that require fast access times and/or additional protection from accidental write/erase operations.

Working Principle

The S29GL01GP11TFIR10 utilizes an advanced nonvolatile memory 2-cell cell device architecture which provides high reliability, low power consumptions and low cost. The 2-cell cell device architecture consists of a cell array, which contains a program/erase controller unit, which is the S29GL01GP11TFIR10\'s primary functional block. The array is managed by the Program/Erase controller unit and can be divided into a number of different storage blocks, each with its own program/erase controller.

The Program/Erase Controller Unit is responsible for controlling the read/write operations within the array, as well as for managing the program and erase operations within the array. The Program/Erase Controller Unit\'s primary function is to ensure that all data stored in the array are always kept up-to-date. This is accomplished by utilizing a specialized error correction code (ECC) that is applied to all data segments in the array. This ECC ensures that any potential errors in the data read or write operations do not accumulate, and ensures that all data are always correct and up-to-date. The ECC also provides additional protection from accidental write/erase operations.

The S29GL01GP11TFIR10 also provides an additional layer of security in the form of write protection, which is an advanced write buffer that prevents unauthorized write or erase operations from occurring within the array. This write protection is applied to all blocks defined within the Program/Erase Controller Unit, and any attempts to write or erase data within that block will be ignored.

Conclusion

The S29GL01GP11TFIR10 is a 64 Mb CMOS Smart-Storage Flash device that provides high reliability, low power consumption and low cost applications with fast read access times and additional protection from accidental write/erase operations. It utilizes an advanced NVM 2-cell cell device architecture and a Program/Erase controller unit with an ECC for error correction, providing additional protection from accidental write/erase operations.

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