Allicdata Part #: | S29GL01GP11TFIR20-ND |
Manufacturer Part#: |
S29GL01GP11TFIR20 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 110... |
DataSheet: | S29GL01GP11TFIR20 Datasheet/PDF |
Quantity: | 1000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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Memory
S29GL01GP11TFIR20 is a high-density, single-power-supply Flash memory from Spansion. It is a non-volatile memory and can retain data even without a power source. This makes it ideal for applications where data needs to be stored for future retrieval even if there is no power available. S29GL01GP11TFIR20 Flash memory is based on NOR Flash architecture, which allows for fast read access times, quick erase times and reliable operation.
Application Field
The S29GL01GP11TFIR20 Flash memory can be used in a wide range of applications. Its low cost and easy availability make it popular in consumer electronics and embedded systems. It is typically used in microcontrollers, digital cameras, mobile phones, flash memory cards and computer peripherals.
The S29GL01GP11TFIR20 Flash memory is also used in automotive, industrial and military applications due to its use of advanced NCAC technology that ensures robust operation in extreme temperature and vibration environments. In addition, it is well suited for applications where small form factor and high endurance are required.
Working Principle
S29GL01GP11TFIR20 Flash memory operates using NOR gate technology. It allows for quick data read/write operations and data retention even without a power source. This is achieved by using floating-gate transistors that have a capacitor and a select transistor connected in series. The capacitor stores electrons and the select transistor is used to control the flow of electrons from the control gate to the floating gate.
When data is written to the S29GL01GP11TFIR20 Flash memory, a voltage is applied to the control gate to generate a tunneling current. This current is used to transfer electrons from the control gate to the floating gate and thus store the data. To read the stored data, a voltage is applied to the control gate to generate a tunneling current, which is then used to read the stored data.
In addition, the S29GL01GP11TFIR20 Flash memory also uses a charge pump circuit to generate the high programming and erase voltages required for operation. This circuit is used to raise the voltage of the internal power supply to the desired level, allowing for fast data write and erase times. Improved features such as endurance and data retention have also been incorporated in the S29GL01GP11TFIR20 Flash memory.
Overall, the S29GL01GP11TFIR20 Flash memory is a reliable and cost-effective memory solution suitable for a wide range of applications. Its NOR based architecture and advanced technologies ensure robust and reliable operation even in challenging environments.
The specific data is subject to PDF, and the above content is for reference
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