S29GL01GP13FAIV10 Allicdata Electronics
Allicdata Part #:

S29GL01GP13FAIV10-ND

Manufacturer Part#:

S29GL01GP13FAIV10

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 64LBGA
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 130...
DataSheet: S29GL01GP13FAIV10 datasheetS29GL01GP13FAIV10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: GL-P
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 130ns
Access Time: 130ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)
Description

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The S29GL01GP13FAIV10 is a specialized memory device and a device that is used in many applications. The device is a type of flash memory, which is a type of nonvolatile storage that uses electrically programming and erasing of data, but it has a different addressing scheme and is also more reliable than other types of memory devices. This memory device is used in a wide range of applications, including computers, smartphones, digital cameras, and tablets, as well as in industrial and automotive applications.The S29GL01GP13FAIV10 is a single-transistor memory device. This type of device is advantageous because it uses a single transistor to store one bit of data, making it faster and more reliable than other types of memory. The device also uses an advanced, multi-level cell (MLC) architecture for storing data, which makes it efficient and able to store more data than other types of memory.The S29GL01GP13FAIV10 is a type of nonvolatile memory, meaning that the data stored in the memory is not lost when power is turned off. This is beneficial for applications that require data to be stored for long periods of time without being powered, such as in embedded systems. The device also uses wear-leveling, which means that data is spread out evenly across the device, which reduces wear on the device over time.The S29GL01GP13FAIV10 also uses an advanced programming technique, which is a double-level cell (DLC) architecture. This type of architecture allows two bits of data to be stored in a single memory cell, making the device more efficient and allowing more data to be stored in a smaller space. The device is also able to read and write data at high speeds, which makes it suitable for use in applications that require high performance.The S29GL01GP13FAIV10 is a versatile memory device and can be used in a variety of applications. It is often used in embedded systems, such as in automotive applications and electronic payment systems, and in industrial applications such as data logging and control systems. It is also used in consumer applications such as digital cameras, smartphones, and gaming consoles. The device is well-suited for these applications due to its advanced programming techniques and its ability to store and retrieve data quickly.The S29GL01GP13FAIV10 is a versatile and reliable memory device that is used in a wide range of applications. The device uses a single-transistor memory architecture, which is fast and reliable, and it also uses an advanced programming technique, which allows it to store more data in a smaller space. The device is also nonvolatile, meaning that the data is not lost when power is turned off, making it suitable for applications that require long-term storage of data.

The specific data is subject to PDF, and the above content is for reference

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