Allicdata Part #: | 1274-1018-ND |
Manufacturer Part#: |
S29GL032N90BFI040 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 32M PARALLEL 48FBGA |
More Detail: | FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral... |
DataSheet: | S29GL032N90BFI040 Datasheet/PDF |
Quantity: | 107272 |
Series: | GL-N |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 90ns |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-FBGA (8.15x6.15) |
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S29GL032N90BFI040 is a Flash memory from Spansion (formerly from AMD). It has a standard 32-bit asynchronous 3V/3V IO interface with a wide voltage range from -2V to +6.5V. This device offers a 32Mbyte organization and is ideal for the needs of embedded systems such as industrial controllers, digital audio systems, automotive entertainment and many more. The chip is also capable of storage for multimedia applications, such as still photos and video clips.
The S29GL032N90BFI040 has several features which make it suitable for a wide range of applications. It includes non-volatile error detection, error correction and programmable read latency. Additionally, the device is able to store its own custom programming parameter fields. This allows highly efficient data manipulation and access control measures leaving media files safe and uncompromised.
The working principle of the S29GL032N90BFI040 is based on the tried and trusted NOR Flash technology. A memory cell is composed of a single MOSFET with the channel connected to the source, the gate connected to the bitline and the drain connected to the wordline. Writing data to the device is done by raising the voltage on the wordline which makes electrons flow from the bitline to the storage node. This creates a difference in potential between the source and the gate turning the MOSFET on. When the voltage is lowered again the electrons stay within the storage node, thus keeping the data stored safely in memory.
The S29GL032N90BFI040 Flash memory is ideally suited for embedded systems. With the efficient programming, excellent longevity and performance, the device is suitable for application such as image intensification, graphics displays, multimedia record and playback, industrial control systems and many more.
The S29GL032N90BFI040 also offers other features which make it a safe and reliable stalwart. These features include 100,000 program-erase and 10 million read cycles, a maximum write time of 30us and a maximum write time of 2us. Furthermore, the device has four banks which offer high speed parallel read-write operations, a four bank sector architecture allowing individual sector erase, and optional data protection.
The S29GL032N90BFI040 Flash memory is an excellent out-of-the-box memory solution that can be applied to a wide range of application fields. With the non-volatile error detection, error correction and versatile programming parameters, the device provides the reliable performance and robust data storage that those embedded systems require.
The specific data is subject to PDF, and the above content is for reference
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