S29GL064N90BFI030

Introduction

S29GL064N90BFI030 is a 16Mb nonvolatile memory device which belongs to the Memory. It is a high-speed and low-voltage CMOS Flash memory chip, consisting of 16 Megabits of uniform sector 8kb Flash Erase sector and 256 bytes SRAM Page Buffer. It features copyback write, block erase, security sector erase and sector swap. Its main operating voltage is 1.7V- 3.6V. This application field and working principle will be discussed in detail in this article.

Application Field

S29GL064N90BFI030 is widely used for applications which need huge data storage capacity, such as digital cameras, personal digital assistants, digital video recorders and etc. It contains 16 Megabits cell and its programming voltage is only1.8V. This nonvolatile memory is suitable for systems operating on low power. It is also widely used in systems appropriate for low power consumption, such as in the CELL Information Communication System (I-CSC), which requires low power consumption. Moreover, it has a self-erase function, which makes sector swap very convenient. It also can be used in low-voltage applications, as its operating voltage range is only 1.7V-3.6V.

Working Principle

S29GL064N90BFI030 works by using its contents as the working mechanism. It consists of 16 Megabits cell and a powerful control logic to enforce the operation. Moreover, it provides a data storage, write and page protection, which makes it suitable for applications with high performance and data storage needs. In addition, it also has a high-speed 8kb Flash Erase sector and 256 bytes SRAM Page Buffer. The 8kb Flash Erase sector, backed by its powerful control logic, ensures that all memory operations can be done quickly and efficiently. Furthermore, the 256 bytes SRAM Page Buffer both works as a cache and to provide the necessary control signals for the Flash operations. In order to ensure a fast and reliable Flash operation, this device also includes a built-in thermally-controlled refresh circuit. The refresh circuit allows the user to set the refresh rate according to the temperature. This in turn makes sure that all memory operations are done correctly.

Conclusion

Overall, S29GL064N90BFI030 is a high-speed and low-voltage CMOS Flash memory device suitable for various applications. It features copyback write, block erase, security sector erase and sector swap and has a built-in thermally-controlled refresh circuit that helps maintain a fast and reliable Flash operation. This device is widely used for applications which require large data storage capacity, due to its high data rate and low power consumption.