Allicdata Part #: | S29GL128P11TFI020-ND |
Manufacturer Part#: |
S29GL128P11TFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 11... |
DataSheet: | S29GL128P11TFI020 Datasheet/PDF |
Quantity: | 2 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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S29GL128P11TFI020 Application Field and Working Principle
Introduction: Overview of Memory
Memory is an important component in any digital device, whose purpose is to store data temporarily or permanently. In order to achieve this purpose, memory relies on two underlying components – memory cells and memory circuits. On the memory cell side, memory cells are divided into random access and read-only memory, among which random access memory is prevalent. On the memory circuit side, memory circuits are divided into SRAM and DRAM, among which SRAM is used extensively in the system of embedded computing.
Overview of NOR Flash
NOR Flash is a type of non-volatile memory (NVM) that can be erased and reprogrammed in a short period of time. It is typically used for code storage in embedded systems and consumer products such as MP3 players, digital cameras and cell phones. NOR flash is based on the NOR logic gate that can only be programmed a cell at a time in order to store data. Unlike NAND flash, NOR flash has a random access design, meaning that the data stored can be randomly read from anywhere and is not limited to be sequentially accessed addressing.
S29GL128P11TFI020 Overview
The S29GL128P11TFI020 is a 128-Mbit (16Mx8) single power, single voltage, low-power NOR Flash Memory, organized as 16M words of 8 bits each. The device, offered in space-saving 48-pin packages, operates from 1.8V to 3V. The S29GL128P11TFI020 is fabricated with advanced non-volatile NOR Flash Technology and is designed to support the following features: high performance page read, high reliability (with built-in ECC protection), suspend/resume operation, block erase, program and read. The device minimizes power consumption with features such as auto suspend, low pulse program/erase, and 1.8Vword line operation and also has an advanced write buffer architecture.
S29GL128P11TFI020 Application Field
The S29GL128P11TFI020 NOR Flash can be widely used in PCB, instrumentation, communication, computer, medical device, automotive and consumer industries. Moreover, due to its low-power and low-voltage feature, it’s also suitable for portable devices, such as cell phones, digital cameras, and laptop computers. Furthermore, because the device supports block erase and suspend/resume operation, it is able to provide greater efficiency and faster performance in comparison to other memories in the NOR Flash family.
S29GL128P11TFI020 Working Principle
The S29GL128P11TFI020 includes a 16Mx8 configuration memory cell array, program and erase (PE) circuits, a 16-bit data buffer, a write buffer controller, and an advanced Control Unit. The device is designed to respond to the following commands: Program page (PP); Program (PR) with the PP command; Erase sector (SE); Erase block (BE); Erase complete chip (CE); Write StatusRegister (WRSR); Read StatusRegister (RDSR); Read StatusRegister2 (RDSR2); Read IDentification (RDID); Read fields (RDF); Low-Voltage Detection Read Mode (RDV); Write Buffer Programming (WBP); and Suspend/Resume operation (Suspend/Resume).
The program and erase operations of S29GL128P11TFI020 are achieved by the program and erase circuits that are controlled by the write buffer controller. The write buffer controller also works in conjunction with the advance Control Unit to control the program and erase operations. The write buffer controller also has the ability to enable a suspend/resume operation that temporarily suspends the program/erase cycles for power saving purposes.
Conclusion
The S29GL128P11TFI020 is a 128-Mbit low-power single voltage NOR Flash Memory featuring high performance page read, high reliability, suspend/resume operations, block erase, program and read operations. Thus far, the S29GL128P11TFI020 has been widely used in many industries due to its low-power, low-voltage feature, making it suitable for portable devices, such as cell phones, digital cameras, and laptop computers. The advantage of the S29GL128P11TFI020 over other NOR Flash memories is its ability to enable suspend/resume operation for power saving purposes.
The specific data is subject to PDF, and the above content is for reference
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