S29GL128S11TFIV20 Allicdata Electronics
Allicdata Part #:

1274-1181-ND

Manufacturer Part#:

S29GL128S11TFIV20

Price: $ 3.24
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 11...
DataSheet: S29GL128S11TFIV20 datasheetS29GL128S11TFIV20 Datasheet/PDF
Quantity: 42
1 +: $ 2.94210
Stock 42Can Ship Immediately
$ 3.24
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Description

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S29GL128S11TFIV20 is a type of memory chip, referring to its application field and working principle. It is capable of almost any memory requirement, such as ROM, PROM, EPROM and EEPROM. It is often used in embedded systems, military applications, consumer electronics, medical and automotive applications.

Application Field of S29GL128S11TFIV20

The S29GL128S11TFIV20 family of devices is commonly used in applications where a small size, flexibility, high performance and low power are required. It can be used in a wide range of consumer electronics, automotive, military and personal computer applications.

The S29GL128S11TFIV20 is a cost-effective, low-power solution for a variety of embedded applications. It has the ability to store and retrieve data using both serial and parallel operations. It supports multiple memory configurations and a wide range of data access types, including write and read operations. The device also contains on-chip error correction and data security features.

The S29GL128S11TFIV20 also has application in data acquisition and control applications. It can be used in medical, automotive and other embedded applications requiring low latency and high-power performance. Its low-power consumption makes it an ideal choice for these applications.

Working Principle of S29GL128S11TFIV20

The S29GL128S11TFIV20 is a non-volatile memory device. It is made up of multiple memory elements arranged into a grid. Each of these memory elements can store a bit of information, either 0 or 1. The device is controlled by a control register which is used to configure the device and access its content.

The S29GL128S11TFIV20 has a sequence of operations, which it performs in order to read and write data. First, the address of the memory location to be accessed is sent to the device. Then, depending on the type of transfer, either a read or write command is sent. The device then accesses the memory location and reads or writes the data.

Finally, the device can store and retrieve the data from the memory location specified. If a read operation is performed, the read data is then sent to the external system for further processing. If a write operation is performed, the data is written to the memory location.

The S29GL128S11TFIV20 also supports on-chip error correction and data security features. The device uses error-correction codes and error-detection codes to ensure the data stored in the device is accurate and secure. Additionally, the device includes an ECC engine which is capable of detecting and correcting single-cell read and write errors.

Conclusion

The S29GL128S11TFIV20 is a versatile non-volatile memory device which can be used for a variety of applications. It is suitable for embedded systems, military applications, consumer electronics, medical and automotive applications. Additionally, the device supports on-chip error correction and data security features.

The specific data is subject to PDF, and the above content is for reference

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