Allicdata Part #: | 428-4354-ND |
Manufacturer Part#: |
S29GL256N10TFI010 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
DataSheet: | S29GL256N10TFI010 Datasheet/PDF |
Quantity: | 14277 |
Series: | GL-N |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8, 16M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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The S29GL256N10TFI010 is a type of memory component, classified as a synchronous, burst-oriented Flash memory component. It is part of the 2.7V SuperFlash family of Flash memory devices. This component offers extended features, configurations, and higher densities of memory.
The S29GL256N10TFI010 is an excellent option for many embedded systems due to its independent chip enable, output enable and write enable control as well as its reduced power consumption. It offers high performance, reliability and durability with a wide range of operating temperatures. This component is often used in telecommunication, handheld and consumer electronics applications.
The S29GL256N10TFI010 can keep up with the ever-evolving standards for data speed and memory capacity. This is due to its synchronous interface and burst-oriented architecture which can be configured for up to four chip select inputs. The high number of available pins allows for more bits per device and improved access times, which allow it to compete with other components in the market.
With this component, you also get features such as different block division sizes and an enhanced erase algorithm that allow you to maximize the data rate while still maintaining as much data as necessary. The S29GL256N10TFI010 also supports Error Detection Correction (EDC) circuitry, so that errors can be identified and corrected quickly and easily.
The S29GL256N10TFI010 works by using the four chip select inputs to access up to four separate memory planes in parallel. It can also be configured for single chip select for serial operation. The three control inputs enable, write enable and output enable are used to control access to the memory.
The synchronous interface of the S29GL256N10TFI010 also gives it the capability to access arrays of 8 or 16 bits in a single nonsequential access. The enhanced erase algorithm allows the embedded system to erase large blocks of data in one operation, while still maintaining a fast data rate.
The S29GL256N10TFI010 also has the ability to detect and correct errors, making it an excellent choice for embedded systems that require a reliable, high-speed memory component. This component is suitable for many applications, from desktop PCs to real-time embedded systems.
In summary, the S29GL256N10TFI010 is an excellent option for embedded systems because of its high performance, reliability and durability. It has many features and configurations that make it a suitable choice for a range of applications. Its synchronous interface, burst-oriented architecture, enhanced erase algorithm, and error detection and correction capabilities make this component an excellent solution for any embedded system.
The specific data is subject to PDF, and the above content is for reference
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