Allicdata Part #: | S29GL256S10DHAV23-ND |
Manufacturer Part#: |
S29GL256S10DHAV23 |
Price: | $ 3.55 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 256M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 1... |
DataSheet: | S29GL256S10DHAV23 Datasheet/PDF |
Quantity: | 1000 |
2200 +: | $ 3.22765 |
Series: | GL-S |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (9x9) |
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The S29GL256S10DHAV23 is a memory product developed by Spansion Inc, a pioneer in Flash memory. It is one of the largest one-time programmable (OTP) NOR memory devices available in a single chip. This memory device comes in a 64 Megabit (8 Megabyte) configuration and offers exceptional performance, as well as fast write times and reliable non-volatile storage. S29GL256S10DHAV23 is well suited for applications that require high performance, such as embedded designs.The S29GL256S10DHAV23 memory device consists of 8 million addressable bytes organized into two 32 Mbyte banks with 128 64-bit blocks in each bank. The first 2 bytes of each block serve as the Device Configuration Register. The remaining 62 bytes can be used for data storage. The device supports fast reads and writes, with writing times as fast as 0.5 μs and read times as fast as 8 μs.The S29GL256S10DHAV23 memory device has an asynchronous page mode feature. The page mode allows the device to quickly access data that is located in the same page. This enables the device to execute data in adjacent pages without the time delays associated with traditional memory accesses. The device can also be used to store program code and execute instructions directly from the memory device.In addition to the page mode, the S29GL256S10DHAV23 also has an optimizing fuse array feature. This feature allows the device to store information in a time-optimized manner and reduce the time it takes to access the data. This feature enables faster read and write times, which helps to improve the overall performance of the device.The S29GL256S10DHAV23 memory device also has a wide range of applications. It can be used in consumer electronics, automotive, industrial, medical electronics, and gaming applications. The device can be used to store and execute code, as well as store data that needs to be quickly accessed.In conclusion, the S29GL256S10DHAV23 is a reliable and high-performance memory device that is well-suited for demanding applications. It offers fast read and write times, as well as an optimizing fuse array that can reduce the time it takes to access data. Its wide range of applications makes it suitable for use in a variety of different projects and industries.
The specific data is subject to PDF, and the above content is for reference
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