Allicdata Part #: | 1274-1036-ND |
Manufacturer Part#: |
S29GL512S10TFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512S10TFI020 Datasheet/PDF |
Quantity: | 241 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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The S29GL512S10TFI020 is one of the best memory solutions that can be found on the market today. It offers an impressive performance and a robust design, allowing it to be used in a wide variety of applications. In this article, we will discuss the application field and working principle of the S29GL512S10TFI020.
Application Field
The S29GL512S10TFI020 is a Flash memory solution based on a NAND Flash technology. This technology allows for a greater level of control and performance than standard Flash memory solutions. The S29GL512S10TFI020 can be used in a variety of fields and applications, such as digital imaging, medical equipment, mobile communication appliances, automotive systems, industrial control, and embedded system products.
The S29GL512S10TFI020 has a high storage density and an efficient power consumption. It also allows for a fast write and read time, making it ideal for applications that require quick data access. Furthermore, the S29GL512S10TFI020 also allows for greater data control and security, as it supports TCG security protocol.
Working Principle
The S29GL512S10TFI020 works by storing data in its NAND Flash memory. It is comprised of millions of memory cells that are organized in a grid-like array. Each cell can store a piece of data, and can either be programmed or erased. The cells can be programmed and erased in blocks, so the entire array of cells can be written or erased at once.
The cells are arranged in a grid-like array, and can be divided into two categories - read/write and program/erase. The read/write cells are used to store data, while the program/erase cells are used for storing data for management functions. These two groups of cells interact with each other in order to retrieve, store and erase data.
In order to access the stored data, the user needs to send a request to the NAND Flash memory. The NAND Flash memory then responds to the request by retrieving the desired data from the memory cells. The retrieved data is then provided to the requesting application.
The S29GL512S10TFI020 provides a number of features, such as fast write and read times, improved data control and security, and a longer operational life. Its impressive performance and robust design make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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