Allicdata Part #: | S29GL512P10FAIR10-ND |
Manufacturer Part#: |
S29GL512P10FAIR10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 64BGA |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1... |
DataSheet: | S29GL512P10FAIR10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-Fortified BGA (13x11) |
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S29GL512P10FAIR10 Memory Application Field and Working Principle
The S29GL512P10FAIR10 Memory has many applications in many scenarios. It is a type of non-volatile Flash memory, which has many advantages, making it a popular choice for many electronic products. This article will discuss the application fields and working principles of the S29GL512P10FAIR10 Memory.
Application Field of S29GL512P10FAIR10 Memory
The S29GL512P10FAIR10 Memory is a multi-purpose memory with a wide range of applications. It is used in many different devices, ranging from embedded systems to mobile devices and digital storage applications. It is particularly useful in embedded systems, such as single-board computers, as its non-volatile nature allows the data stored inside to remain intact when the power supply is interrupted. The non-volatile nature of the S29GL512P10FAIR10 Memory also makes it ideal for digital storage applications, such as digital cameras, camcorders, media players, and other handheld electronic devices.
In addition to these applications, the S29GL512P10FAIR10 Memory is also suitable for use in communications equipment. It is often used in cellular phones and satellite television receivers, due to its non-volatile nature and high speeds. This makes it ideal for storing instructions, data, and firmware in these types of applications.
Working Principle of S29GL512P10FAIR10 Memory
The S29GL512P10FAIR10 Memory is a type of non-volatile Flash memory which operates using Fowler–Nordheim tunneling, also known as FN tunneling. This tunneling process basically involves using a strong electric field, which is generated by applying a large voltage to the source and drain of the Flash memory cell, to “tunnel” electrons across the thin oxide layer of the memory cell. This tunneling effect is known as the Fowler–Nordheim effect.
When the electrons are tunneled across the thin oxide layer, they are stored in the floating gate of the Flash memory cell. This causes a change in the threshold voltage of the memory cell, which can then be read by the memory controller. Depending on the value of the threshold voltage, the memory cell can either be programmed or erased. This process is how data is stored in the S29GL512P10FAIR10 Memory.
Conclusion
In conclusion, the S29GL512P10FAIR10 Memory is a type of non-volatile Flash memory which has many applications in various fields. It is particularly useful in embedded systems and digital storage applications due to its non-volatile nature. It operates using the Fowler–Nordheim tunneling process which involves applying a large voltage to the source and drain of the Flash memory cell. This process allows electrons to be tunneled across the thin oxide layer of the memory cell, and stored in the floating gate.
The specific data is subject to PDF, and the above content is for reference
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