S29GL512P10FAIR20

Series:	GL-P
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (32M x 16)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA
Supplier Device Package:	64-Fortified BGA (13x11)

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Introduction to S29GL512P10FAIR20

The S29GL512P10FAIR20 is a type of static random access memory (SRAM), which is widely used in many applications due to its advantages over dynamic random access memory (DRAM). SRAMs are very fast to access and use less power than their counterpart DRAMs, making them suitable for a variety of applications.

Application Field of S29GL512P10FAIR20

The S29GL512P10FAIR20 SRAM is used in a variety of applications, such as air traffic control systems, communication systems, military and aerospace applications, automotive systems, and consumer electronics. It can also be used in embedded systems, such as microcontrollers, to provide additional memory for applications such as image processing and audio processing.

Working Principle of S29GL512P10FAIR20

The S29GL512P10FAIR20 SRAM works on the basic principle of storing data in an array of memory cells that are addressed by a row and column address. Each memory cell consists of two flip-flops, one to store the bit value and the other to store the complement of the bit value.When a write operation is performed, the data written to the memory cell is stored in the two flip-flops. When a read operation is performed, the two flip-flops are read and the data is latched onto a separate output bus. This allows for fast access to the data stored in the SRAM.

Conclusion

The S29GL512P10FAIR20 SRAM is a type of static random access memory (SRAM) that can be used in a variety of applications due to its speed, low power consumption and compatibility with a variety of embedded systems. It works on the basic principle of storing data in an array of memory cells which are addressed by a row and column address.

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