S29GL512P10TFCR10

The S29GL512P10TFCR10 is a 512-megabit, 130nm, CMOS Multi-Purpose Flash device that combines commands, addresses and data on a single chip. It belongs to the category of memory, and is widely used in some of the most demanding applications in data storage and dataprocessing systems. The S29GL512P10TFCR10 Flash device is a non-volatile storage medium with over 10 years of data retention, allowing users to store data even during periods of power loss or system downtime.

The S29GL512P10TFCR10 device has high write/erase cycles and is internally organized as 128 blocks of 4 megabits (Mbits) each. It also has different levels of security for enhanced data protection. In addition to the 512 megabits of major storage capacity, it supports a fast access at 10 MHz clock rate with random access capabilities, making it suitable for applications requiring high performance data transfer rates. The device is preprogrammed with the Enhanced Software Programming (ESP) algorithm to ensure that the application data is written into the correct block, thus eliminating write errors.

Its features include low-operation current, adjustable write automatic sampling modes, flexible sector/block operations, slave/master modes, page mode, sector protection, and more. Its 8-bit (x 8) and 16-bit (x 16) multiplexed address/data interfaces make it a reliable source for data storage and process control. It is also stable under environments with wide operating temperature ranges. The S29GL512P10TFCR10 device is software-programmable and supports field-programming using secure erase/program functions.

The S29GL512P10TFCR10 offers its users the ability to organize their data into specific structures and has design capabilities that meet the needs of a wide range of applications. It provides a flexible, reliable and cost-effective solution for embedded control systems. S29GL512P10TFCR10 works on the principle of holding up low-voltage non-volatile memory charges, which can be read and written by special electronic command pulses.

The Flash cells of the S29GL512P10TFCR10 are organized into 128 blocks, with 4 Mbits in each block. Each block has 64 pages, which are made up of 128 designated locations with 32 bytes of data each. The memory is divided into two areas: the user area and the block area. The block area contains 32 of the 64 pages in each block, as well as the block and page protection bits. The user area is made up of the remaining 32 blocks and is used to store user data.

The data stored in the S29GL512P10TFCR10 Flash memory is non-volatile, meaning that it remains in a state of retention even when power is removed from the device. Data can be programmed and erased via the same command, either at the block level or at the page level. This simplifies programming and data management because only a single command set is needed.

The device also has a low-power design feature, allowing it to use less power, resulting in longer battery life for portable applications. Additionally, it supports high-speed data transfers and has a fast access time of 10 microseconds. Its write speeds are also adjustable from 10 microseconds to 50 microseconds depending on the number of bytes written. The S29GL512P10TFCR10 device also includes on-chip ECC (Error Correcting Code) that can detect and correct single-bit errors during data retrieval.

The S29GL512P10TFCR10 is widely used in a variety of applications, such as automotive, industrial, communication, audio, video, and gaming systems, which require data storage and processing. It is also used in embedded systems, digital cameras, and other portable devices that need high reliability and cost-effective non-volatile flash memory.